Method for analyzing total dose radiation effect of deep submicron device
A technology of total dose radiation and deep submicron, which is applied in the field of analyzing the total dose radiation effect of deep submicron devices, can solve the problems of negative impact on the reliability of integrated circuits, unreachable, increased power consumption of integrated circuits, etc., and achieve accurate total dose Radiation effect, effect with simple steps
Active Publication Date: 2014-05-07
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Problems solved by technology
This off-state leakage current will increase the power consumption of the integrated circuit and have a greater negative impact on the reliability of the integrated circuit, which has become an important problem to be solved at this stage
[0003] Reinforcement of deep submicron devices against total dose radiation effect is a major means to solve the above problems. However, the effect of total radiation dose effect in different regions of deep submicron devices is often quite different. Simply adopt a single The means of strengthening the device often does not achieve the desired effect
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[0022] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0023] see Figure 1 to Figure 4b . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed ar...
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The invention provides a method for analyzing a total dose radiation effect of a deep submicron device. The method comprises the following steps of: primarily establishing a device model according to test data of a deep submicron device prototype with a shallow-channel isolation groove structure; positioning a top region and a bottom region for a shallow-channel isolation groove of the device model according to the distribution of the doping concentration of a substrate; and according to test data of a radiated device, adding different equivalent simulation electric charges into the top region and the bottom region to obtain simulated data which is in fit with the test data so as to determine the effect of the equivalent simulation electric charges in the top region and the bottom region of the deep submicron device model, thereby determining the effect of the total dose radiation effect in the top region and the bottom region of the deep submicron device prototype. The steps in the method are simple. The total dose radiation effect of the deep submicron device can be accurately simulated. The influence of the total dose radiation effect on different positions of the device can be reflected. The reliable basis is provided for reinforcing the total dose radiation resistance effect of the device.
Description
technical field [0001] The invention relates to a device modeling method, in particular to a method for analyzing the total dose radiation effect of deep submicron devices. Background technique [0002] The total dose effect of ionizing radiation refers to the phenomenon that electronic components or systems are exposed to radiation for a long time, and oxide trap charges and interface state charges are accumulated in the insulating layer (mainly the oxide layer). This cumulative effect can cause degradation of semiconductor device performance. The performance degradation of MOS devices after total dose irradiation is mainly manifested as threshold voltage drift and increase of off-state leakage current. The shift in threshold voltage is mainly due to trapped charges in the gate oxide; the increase in off-state leakage is mainly due to trapped charges in the isolation oxide. The gate oxide of deep submicron devices is very thin (several nm) and insensitive to total dose ir...
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IPC IPC(8): G01N17/00G06F17/50
Inventor 张正选刘张李胡志远宁冰旭毕大炜陈明邹世昌
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI