Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ultraviolet light single-photon detector with built-in negative feedback metal-semiconductor-metal structure

A single-photon detector, semiconductor technology, applied in semiconductor devices, instruments, sustainable manufacturing/processing, etc., can solve problems such as increasing system design costs, and achieve the effect of reducing design costs and simplifying system design

Inactive Publication Date: 2012-06-13
NANJING UNIV
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the traditional MSM structure detector needs an external complex extinguishing circuit to realize single photon detection, which increases the cost of system design.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ultraviolet light single-photon detector with built-in negative feedback metal-semiconductor-metal structure
  • Ultraviolet light single-photon detector with built-in negative feedback metal-semiconductor-metal structure
  • Ultraviolet light single-photon detector with built-in negative feedback metal-semiconductor-metal structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] specific implementation plan

[0036] Such as Figure 2EShown is the cross-sectional structure diagram of the built-in negative feedback metal-semiconductor-metal ultraviolet single photon detector of the present invention, we can form the substrate 201 from bottom to top, and the substrate 201 can be made of materials such as SiC, sapphire and silicon, or It can be GaN-based or AlGaN-based materials; n-type semiconductor 202, the material can be GaN, AlGaN and SiC and other materials, which also has a buffer layer to reduce lattice adaptation and dislocation density, and can be grown by MOCVD epitaxy; thin film Resistor 203, thin film resistors can use SiC, Si x o y Or undoped GaN, AlGaN and other materials, whose resistance value is about tens of KΩ to 1MΩ, can be epitaxially grown by MOCVD; the cathode electrode 204 and the anode electrode 205, and the cathode electrode 204 forms a Schottky junction with the n-type semiconductor , The electrodes can be made of tra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An ultraviolet light single-photon detector with a built-in negative feedback metal-semiconductor-metal structure comprises a substrate, a buffer layer, a n-type semiconductor, an interdigital film resistor, an anode electrode and an interdigital electrode from bottom to top, wherein the buffer layer can grow on the substrate, the n-type semiconductor is arranged on the substrate or the buffer layer, the interdigital film resistor is arranged on the n-type semiconductor, anode electrode position forms the anode electrode on the film resistor, and the interdigital electrode is arranged on the uppermost layer. A cathode electrode and the n-type semiconductor form schottky junction, and the anode electrode is deposited on the film resistor. The ultraviolet light single-photon detector with the built-in negative feedback metal-semiconductor-metal structure solves problems of difficulty in process control and expensive cost caused by complex process flow of ultraviolet light single-photon detectors with a p-n structure and a p-i-n structure.

Description

technical field [0001] The invention relates to a novel metal-semiconductor-metal structure ultraviolet single-photon detector and its manufacturing method, and the structure is also applicable to metal-semiconductor-metal structure single-photon detectors in other bands. Background technique [0002] The detection of ultraviolet light, especially the solar-blind ultraviolet band, has extremely important applications in space detection and military affairs. At present, the photon counting system in the ultraviolet band uses a photomultiplier tube (PMT), but the photomultiplier tube is large in size, fragile, high in operating voltage and expensive, so a solid-state ultraviolet detector with a small size and cheap price is very important. The advantages. [0003] The currently available solid-state single-photon detectors in the ultraviolet band are p-n structures or p-i-n structures. Ohmic contact, the process is difficult to form a good ohmic contact, process control is d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/101G01J11/00H01L31/18
CPCY02P70/50
Inventor 闫锋吴福伟
Owner NANJING UNIV
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com