Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for measuring related parameters of sensitivity, linearity and dark noise of charge coupled device (CCD) chip

A related parameter and dark noise technology, applied in the field of measurement, can solve the problems of reducing the accuracy of parameter measurement, unable to accurately express parameters, and unable to evaluate the performance of CCD chips.

Inactive Publication Date: 2012-06-20
XIDIAN UNIV
View PDF3 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the above-mentioned performance parameters of CCD chips in China generally only measure a specific parameter, which makes it impossible to make a comprehensive evaluation of the performance of CCD chips, and most of them use incandescent lamps as lighting sources, which leads to the inability to accurately express the parameters related to the spectrum. , can only be calculated by means of the average value, which greatly reduces the accuracy of parameter measurement, and the current measurement method generally places the CCD chip in a normal temperature environment for measurement, and does not have a working environment temperature for the CCD chip. Considering that the measured parameters are different from the actual parameters when the CCD chip is in a specific working environment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for measuring related parameters of sensitivity, linearity and dark noise of charge coupled device (CCD) chip
  • Method for measuring related parameters of sensitivity, linearity and dark noise of charge coupled device (CCD) chip
  • Method for measuring related parameters of sensitivity, linearity and dark noise of charge coupled device (CCD) chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0055] CCD chip is a widely used imaging device, which is widely used in many fields such as astronomy, aerospace, biological and medical research, molecular dynamics, spectroscopy, underwater photography, X-ray detection, etc. For this reason, the performance parameters of CCD chip It is critical to conduct an assessment. At present, the evaluation of CCD chips mainly includes the following parameters:

[0056] ①Quantum efficiency η: The ratio of the number of photoelectrons generated by the CCD under the irradiation of wavelength λ to the number of incident photons. This parameter characterizes the response capability of the CCD chip to monochromatic light of a specific wavelength.

[0057] ②Responsivity parameter R: The ratio of the signal voltage to the exposure amount of the CCD under the illumination of monochromatic light of a given wavelength. This parameter generally describes the CCD quantum efficiency and system gain.

[0058] ③Saturation μ p.sat : The number of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for measuring related parameters of sensitivity, linearity and dark noise of a charge coupled device (CCD) chip, and mainly solves the problems of low measurement precision and incomplete measurement parameters in the prior art. The method comprises the following steps of: selecting a wavelength eta corresponding to the moment that the quantum efficiency of the CCD chip is maximal, and setting a tunable wavelength monochromatic uniform light source system to generate monochromatic light with the wavelength eta; selecting a series of integration time, and controlling the CCD chip to shoot image information and upload the image information to a computer by taking the integration time as parameters; selecting needed images by using corresponding computer software, and calculating the mean gray value mu, the time domain variance sigma<2> of the images and a system gain K; and calculating a saturation level mup.sat, a signal-to-noise rate (SNR), an absolute sensitivity threshold value mup.min, a dynamic response range DR and a nonlinearity error LE by using the acquired parameters. The method for measuring the related parameters of the sensitivity, the linearity and the dark noise of the CCD chip has the advantages of high parameter measurement precision, high stability and complete measurement parameters.

Description

technical field [0001] The invention belongs to the field of measurement technology, in particular to the measurement of CCD chip sensitivity, linearity and noise-related parameters, and is used for the development, evaluation and screening of CCD chips. Background technique [0002] In the development and application of CCD chips, due to the limitations of processing and measurement technology, the actual quantum efficiency and responsivity parameters of CCD chips are different from the measured values ​​given by the manufacturer. In some key application fields, quantitative understanding is required. The actual performance parameters of the CCD chip, so as to make reasonable corrections to the collected data and obtain better and more accurate data. Therefore, it is necessary to propose a method to effectively measure the sensitivity, linearity and noise-related parameters of the CCD chip. Through these performance parameters, the output data of the CCD is processed to obt...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01R31/28G01M11/02
Inventor 邵晓鹏许宏涛乔林王杨马菁汀徐大庸钟宬刘飞靳振华
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products