Insulated gate bipolar transistor (IGBT) half-bridge power module

Abstract

The invention relates to an insulated gate bipolar transistor (IGBT) half-bridge power module. The IGBT half-bridge power module comprises a shell and a copper bottom plate which is arranged on a bottom surface of the shell, wherein a main circuit, at least two input electrodes and at least one output electrode are connected with the copper bottom plate through a metal-coated ceramic substrate; the at least two input electrodes and the at least one output electrode are respectively provided with a groove-shaped part and a leading-out part; groove-shaped bottom surfaces of the two input electrodes are opposite; a top plate of the shell is provided with insertion grooves which respectively correspond to each input electrode and the output electrode; an insertion plate with a nut seat is correspondingly arranged in each insertion groove; a vertical edge of the leading-out part of each input electrode penetrates through an electrode groove between the corresponding insertion plate and the corresponding insertion groove, and a horizontal connecting plate at the top of each input electrode is positioned on a top surface of the insertion plate; and the vertical edge of the leading-out part of the output electrode penetrates through the electrode groove between the corresponding insertion plate and the corresponding insertion groove, and the horizontal connecting plate at the top of the output electrode is positioned on the top surface of the insertion plate. The IGBT half-bridge power module is convenient to manufacture and install and low in processing cost, and low inductance and electrode low stress can be realized.

Description

technical field [0001] The invention relates to an IGBT half-bridge power module and belongs to the technical field of power module manufacturing. Background technique [0002] Existing high-power semiconductor silicon IGBT half-bridge power modules often work under the condition of high voltage and high current, and the power module is often in the process of high-temperature and high-frequency switching, so the internal packaging inductance of the power module and the stress between the structural parts of the power module are always reduced. It is the main development direction of power module sealing technology. [0003] At present, there are various structures of high-power semiconductor silicon IGBT half-bridge power modules, each with advantages and disadvantages. Common power module structures are as follows: one is to reduce the internal package inductance, the shape of the electrode is optimized, the distance between the two electrodes is very close, and the facin...

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Problems solved by technology

Since the electrodes are bent after the power module is packaged, the bending process will cause certain stress between the electrodes and the metal-ceramic substrate. At the same time, during the long-term operation of the semiconductor power module, each The electrodes are also affected by factors such as mechanical vibration, mechanical stress, and thermal stress. Therefore, various stresses will cause the electrodes to shake and spread to the welding points of each electrode, thereby reducing the firmness of the welding points of each electrode, and at the same time Power loss due to shaking of the electrodes reduces operational reliability

Another structure of the power module is to make the electrodes and the shell into an integrated structure. The electrodes are connected to the metal-ceramic substrate through aluminum wires. The buffering effect of the aluminum wires can reduce the stress caused by the bending of the electrodes on the metal-ceramic substrate. The processing difficulty of the power module of this structure increases, and the cost will increase accordingly

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