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Reversal laminated organic light emitting diode

A technology of light-emitting diodes and organic light-emitting layers, which is applied in the directions of light-emitting materials, electrical components, and electrical solid-state devices, and can solve the problems of poor stability, high driving voltage, and low efficiency.

Inactive Publication Date: 2012-06-27
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide an inverted stacked organic light emitting diode, which is an inverted stacked organic light emitting diode using a connection layer structure composed of double p-type doped layers and double n-type doped layers, It overcomes the disadvantages of high driving voltage, low efficiency and poor stability of the reverse stack organic light-emitting diode with a connection layer structure composed of a single p-type doped layer and a single n-type doped layer in the prior art

Method used

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  • Reversal laminated organic light emitting diode
  • Reversal laminated organic light emitting diode
  • Reversal laminated organic light emitting diode

Examples

Experimental program
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Effect test

Embodiment 1

[0060] The structure is ITO / NTCDA:Pyronin B=1:0.5, thickness 5nm / Bphen:Rb 2 CO 3 =1:0.5, thickness 5nm / Alq3 thickness 40nm / mCP thickness 40nm / CBP:ReO 3 =1:0.5, thickness 5nm / 2-TNATA:ReO 3 =1:0.5, thickness 5nm / NTCDA:Pyronin B=1:0.5, thickness 5nm / Bphen:Rb 2 CO 3 =1:0.5, thickness 5nm / Alq3 thickness 40nm / mCP thickness 40nm / CBP:ReO 3 =1:0.5, thickness 5nm / 2-TNATA:ReO 3 =1:0.5, an inverted stack organic light-emitting diode with a connection layer structure consisting of double p-type doped layers and double n-type doped layers with a thickness of 5nm / Ag and a thickness of 100nm.

[0061] The organic light-emitting diode is composed of an ITO cathode, a layer of NTCDA deposited on the ITO cathode with a thickness of 5nm: Pyronin B=1:0.5 organic n-type doped electron transport layer I, a layer deposited on NTCDA: Pyronin B organic n-type Doping the electron transport layer I with Bphen:Rb with a thickness of 5 nm 2 CO 3 =1:0.5 Organic n-type doped electron injection layer ...

Embodiment 2

[0103] The structure is a layer of translucent gold covered on the glass substrate, the thickness is 20nm / NTCDA:Pyronin B=1:0.01, the thickness is 1000nm / Bphen:Rb 2 CO 3 =1:0.01, thickness 10nm / Alq3 thickness 60nm / mCP thickness 60nm / CBP:ReO 3 =1:0.01, thickness 10nm / 2-TNATA:ReO 3 =1:0.01, thickness 10nm / NTCDA:Pyronin B=1:0.01, thickness 10nm / Bphen:Rb 2 CO 3 =1:0.01, thickness 10nm / Alq3 thickness 60nm / mCP thickness 60nm / CBP:ReO 3 =1:0.01, thickness 10nm / 2-TNATA:ReO 3 =1:0.01, a reverse stack organic light-emitting diode with a connection layer structure consisting of double p-type doped layers and double n-type doped layers with a thickness of 1000nm / Ag with a thickness of 100nm.

[0104] The organic light-emitting diode is composed of a layer of translucent gold cathode with a thickness of 20nm covered on a glass substrate, and a layer of NTCDA:Pyronin B=1:0.01 organic n-type doped with a thickness of 1000nm deposited on the gold cathode. Electron transport layer I, a la...

Embodiment 3

[0136] The structure is a layer of translucent silver covered on the glass substrate, the thickness is 20nm / NTCDA:Pyronin B=1:0.2, the thickness is 500nm / Bphen:Rb 2 CO 3 =1:0.2, thickness 1nm / Alq3 thickness 50nm / mCP thickness 50nm / CBP:ReO 3 =1:0.2, thickness 1nm / 2-TNATA:ReO 3 =1:0.2, thickness 1nm / NTCDA:Pyronin B=1:0.2, thickness 1nm / Bphen:Rb 2 CO 3 =1:0.2, thickness 1nm / Alq3 thickness 50nm / mCP thickness 50nm / CBP:ReO 3 =1:0.2, thickness 1nm / 2-TNATA:ReO 3 =1:0.2, an inverted stack organic light-emitting diode with a connection layer structure consisting of double p-type doped layers and double n-type doped layers with a thickness of 5nm / Ag with a thickness of 100nm.

[0137] The organic light-emitting diode is composed of a layer of translucent silver cathode with a thickness of 20nm covered on a glass substrate, and a layer of NTCDA:Pyronin B=1:0.2 organic n-type doped electrons with a thickness of 500nm deposited on the silver cathode. Transport layer I, a layer of Bphe...

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Abstract

The invention relates to an organic light emitting diode, in particular to a reversal laminated organic light emitting diode with a connection layer structure consisting of two p-type doped layers and two n-type doped layers. The reversal laminated organic light emitting diode consists of a layer of negative electrode, an organic n-type doped electron transmission layer I, an organic n-type doped electron injection layer I, an organic luminous layer I, an organic hole transition layer I, an organic p-type doped hole injection layer I, an organic p-type doped hole transmission layer I, an organic n-type doped electron transmission layer II, an organic n-type doped electron injection layer II, an organic luminous layer II, an organic hole transition layer II, an organic p-type doped hole injection layer II, an organic p-type doped hole transmission layer II and a layer of positive electrode which are sequentially stacked on a substrate from bottom to top. By the reversal laminated organic light emitting diode, the shortcomings of high driving voltage, low efficiency and low stability of the reversal laminated organic light emitting diode in the prior art are overcome.

Description

technical field [0001] The technical solution of the present invention relates to an organic light emitting diode, in particular an inversion stacked organic light emitting diode. Background technique [0002] Organic light-emitting diodes have a wide range of application markets in the fields of high-definition active flat panel display and solid-state energy-saving lighting. The development of high-function organic light-emitting diodes has vital practical significance for accelerating the industrialization of organic electroluminescence technology. [0003] At present, most of the high-function organic light emitting diodes developed in the prior art are stacked structure organic light emitting diodes. The so-called laminated structure means that two discrete light-emitting units are connected in series through a connecting layer structure. Under the same current density, the brightness, current efficiency, and lifespan of the laminated device are twice that of a single...

Claims

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Application Information

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IPC IPC(8): H01L51/52H01L51/54C09K11/06
Inventor 秦大山
Owner HEBEI UNIV OF TECH
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