Phase change material for phase change storage and method for adjusting phase change parameter

A phase-change material and phase-change storage technology, applied in the field of optoelectronics, can solve problems such as limiting the process of practical development, and achieve the effect of information storage

Active Publication Date: 2014-02-05
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although the PC-RAM memory using the resistance properties of phase-change thin films has been introduced in an earlier period, due to the limitation of preparation technology and process, the phase-change materials at that time can only undergo phase change under a strong electric field, which limits The progress of its practical development

Method used

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  • Phase change material for phase change storage and method for adjusting phase change parameter
  • Phase change material for phase change storage and method for adjusting phase change parameter
  • Phase change material for phase change storage and method for adjusting phase change parameter

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Embodiment 1

[0026] The electrical properties of phase change materials can be changed in a wide range. The change of the structural state of phase change materials will be accompanied by changes in electrical properties, and the range of change can reach multiple orders of magnitude. Voltage pulses can make phase change materials The reversible conversion between different structural states, and the information storage of phase change memory can be realized by using the change of electrical properties between different states.

[0027] By controlling Ge x SnTe or Si x The content of Ge and Si in SnTe can precisely adjust the crystallization temperature and melting point of the material. In an appropriate range, the material has a higher crystallization temperature and better reversible phase transition capability, and the memory based on the material has better performance.

[0028] Through the study of the resistivity of the material over time, it is found that the resistivity of the m...

Embodiment 2

[0037] In order to test Ge x The electrical properties of SnTe-based storage materials, such as figure 2 The storage cell structure of the phase change memory is shown. The storage material is Ge 1.7 SnTe thin film material, the storage unit is completed by a standard semiconductor process line of 0.18 microns, and the dimensions of each film layer are as follows: the lower electrode is AI, and the film thickness is 300 nanometers; the heat insulating material layer on the lower electrode is SiO2 , and its thickness is 700 nanometers; the hollow columnar electrode in the insulating material SiO2 layer is W, its outer diameter is 260 nanometers, and its inner diameter is 100 nanometers; the insulating material layer on the hollow cylindrical electrode is SiO 2 , with a thickness of 200 nm; Ge 1.7 The thickness of the SnTe memory material is 150 nm; the Ge 1.7 The transition layer material on the SnTe storage material is TiN, and its thickness is 20 nanometers.

[0038] Per...

Embodiment 3

[0042] Preparation of Ge on thermally oxidized silicon substrates by magnetron sputtering 1.7 For SnTe and GeSnTe films, the film is heated in situ in a vacuum chamber with a vacuum degree of 10mtorr, and the sheet resistance change of the film is measured by a probe in the vacuum chamber that is in contact with the surface of the film. image 3 Display Ge 1.7 The resistance of both SnTe and GeSnTe decreases with the increase of temperature, and the resistance decreases rapidly and greatly at the crystallization temperature, with a difference of about two orders of magnitude. Ge 1.7 The crystallization temperature of SnTe is 477K, and that of GeSnTe is 447K. The increase of Ge content can improve the Ge x The crystallization temperature of SnTe material increases Ge x The thermal stability of SnTe makes Ge x SnTe retains data longer at higher temperatures.

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Abstract

The invention discloses a phase change material for phase change storage and a method for adjusting the crystallization temperature and melting point of the phase change material. The phase change material is a storage material consisting of germanium, tin and tellurium, or a storage material consisting of silicon, tin and tellurium. In the phase change material, the atom percentage content of germanium / silicon is 0.5-80; and in the phase change material, the atom percentage content of tellurium is 0.5-80. The phase change material is a material which is reversible under the action of external energy; in phase change storage, the low impedance state of the phase change storage corresponds to all or a part of crystals of the phase change material; and the high impedance state of the phase change storage corresponds to the amorphous state of the phase change material. The phase change material has a high-impedance state and a low impedance state, reversible conversion can be realized between the high impedance state and the low impedance state by applying a pulse electric signal, and the basic requirement of the storage material of the phase change is met.

Description

technical field [0001] The invention belongs to the field of optoelectronic technology, and relates to a phase change material, in particular to a phase change material used for phase change storage; meanwhile, the invention also relates to a method for adjusting the phase change parameters of the phase change material. Background technique [0002] Phase change memory (PC-RAM, Phase Change-Random Access Memory) technology is based on S.R.Ovshinsky in the late 1960s (Phys. Rev. Lett., 21, 1450-1453, 1968) and early 1970s (Appl. Phys. Lett., 18, 254-257, 1971), the phase-change thin film proposed can be applied to the construction of phase-change storage medium, which is a storage device with low price and stable performance. PC-RAM memory can be made on silicon wafer substrate On the bottom, its key material is a phase-change film that can record information. [0003] The key feature of the phase change alloy material is that when it is given an electric pulse, it can make ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 饶峰任堃宋志棠吴良才
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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