Side surface coupling unidirectional transmission photonic crystal waveguide device
A technology of photonic crystal waveguide and one-way transmission, which is applied in the direction of optical waveguide, light guide, optical element, etc., can solve the problems of low surface roughness and large scattering, achieve low surface roughness, high processing precision, and solve large scattering Effect
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specific Embodiment approach 1
[0017] Specific implementation mode 1. Combination Figure 1 to Figure 5 Describe this embodiment, the side-coupled unidirectional transmission photonic crystal waveguide device described in this embodiment includes a waveguide layer 13, a low refractive index buried layer 7 and a substrate layer 8, and the waveguide layer is located on the top of the low refractive index buried layer 7 , the lower part of the low-refractive index buried layer 7 is connected to the substrate layer 8; the waveguide layer includes a waveguide area 1, a defect area 10 and a waveguide area 2; , the first waveguide area 1 is composed of a plurality of dielectric columns 9 periodically arranged, the outermost row of the second waveguide area 2 is distributed with coupling dielectric columns 12, and the row of coupling dielectric columns 12 constitutes a coupling area 3, and the second waveguide area 2 Contains a plurality of point defects 6 arranged in a direction parallel to the defect region 10, e...
specific Embodiment approach 2
[0031] Specific embodiment two, combine Figure 6 to Figure 9 Describe this embodiment, this embodiment and the specific manufacturing process of the side-coupled unidirectional transmission photonic crystal waveguide device described in the first specific implementation:
[0032] The first step is to prepare the scribing groove required for scribing: such as Figure 6a~6 g shown.
[0033] (A) For substrate silicon 101 with a thickness of 600 μm, on which a silicon dioxide layer 102 with a thickness of 3 μm is grown (such as Figure 6a shown) for cleaning;
[0034] (B) if Figure 6b As shown, a strontium titanate thin film 103 is prepared on the silicon dioxide layer 102 by a sol-gel method;
[0035] (C) if Figure 6c As shown, a photoresist film 104 with a thickness of 2-3 μm is coated on the strontium titanate film 103;
[0036] (D) putting the completed structure in step (C) into an oven for pre-baking;
[0037] (E) if Figure 6d As shown, the photoresist film 104 i...
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