Schottky barrier transistor possessing carbonic insulating layer and manufacturing method thereof

Abstract

A Schottky barrier field effect transistor with a carbon-containing insulation layer and a method for fabricating the same are provided. The Schottky barrier field effect transistor comprises: a substrate (1); a gate stack (2) formed on the substrate (1); a metal source (4) and a metal drain (5) formed in the substrate (1) on both sides of the gate stack (2) respectively; and the carbon-containing insulation layer (3) formed between the substrate (1) and the metal source (4) and between the substrate (1) and the metal drain (5) respectively, in which a material of the carbon-containing insulation layer (3) is organic molecular chains containing an alkyl group.

Description

technical field [0001] The invention relates to the technical field of semiconductor design and manufacture, in particular to a Schottky barrier transistor with a carbon-containing insulating layer and a low Schottky barrier and a preparation method thereof. Background technique [0002] With the continuous shrinking of feature size, traditional transistor fabrication technology has encountered more and more challenges. Below the 30nm technology node, Schottky barrier transistors have many advantages, such as low source and drain resistance, natural abrupt contact, and no latch-up effect, compared with traditional structure transistors. However, the Schottky source and drain contacts generally have a serious Fermi level pinning phenomenon, which limits the magnitude of the source-drain current. One solution is to insert a thin insulating layer between the semiconductor substrate material and the metal source and drain to block the free states in the metal source and drain f...

AI Technical Summary

Problems solved by technology

However, the Schottky source and drain contacts generally have a serious Fermi level pinning phenomenon, which limits the magnitude of the source-drain current.

One solution is to insert a thin insulating layer between the semiconductor substrate material and the metal source and drain to block the free states in the metal source and drain from entering the semiconductor. This method can reduce the metal-induced bandgap state , effectively weaken the Fermi level pinning and reduce the height of the Schottky barrier, but the traditional thin insulating layer is generally a thin film of silicon nitride or other similar materials obtained by PVD or CVD. The repeatability is very dependent on the conditions of the film growth equipment. The deviation of the conditions of the film growth equipment will lead to the deviation of the film thickness of the insulating layer, which will affect the blocking effect on the free state of the metal, which is not conducive to the reduction of the Schottky barrier.

Images