LED chip structure with overlapped electrodes

Abstract

The invention relates to an LED chip structure with overlapped electrodes, which comprises a substrate, an N-type gallium nitride layer, a quantum well and a P-type gallium nitride layer, wherein the P-type desalting base layer is covered with a first transparent conducting layer, the first transparent conducting layer is covered with a second transparent conducting layer, P electrodes are symmetrically distributed on the second transparent conducting layer, and the P electrodes are electrically connected with the second transparent conducting layer; and transparent current diffuse control insulation layers are uniformly arranged under the P electrodes. According to the invention, a current diffuse control insulation layer is arranged between the first transparent conducting layer and the second transparent conducting layer, the current diffuse control insulation layer is positioned right below the P electrodes and can completely shield the P electrodes; the current path of the LED during the work can be changed through the current diffuse control insulation layer, so that a luminous region is enabled to be positioned at the periphery of the current diffuse control insulation layer and far away from the P electrodes, the P electrodes are prevented from absorbing rays, the areas of the electrodes are reduced, the light-emitting area is increased, the light extraction efficiency is improved, and the structure is compact, safe and reliable.

Description

technical field [0001] The invention relates to an LED chip structure, in particular to an LED chip structure with overlapping electrodes, and belongs to the technical field of LED chips. Background technique [0002] Light-emitting diodes (LEDs) have undoubtedly become one of the most valued light source technologies in recent years. On the one hand, the LED has the characteristics of small size, and on the other hand, the LED has the power-saving characteristics of low current and low voltage driving. Theoretically, it is estimated that the luminous efficiency of semiconductor LED lighting can reach or even exceed 10 times that of incandescent lamps and 2 times that of fluorescent lamps. At the same time, it also has many advantages such as firm structure, strong impact resistance and earthquake resistance, super long life, which can reach 100,000 hours; no infrared and ultraviolet radiation; no mercury, which is conducive to environmental protection and many other advant...

AI Technical Summary

Problems solved by technology

[0004] As we all know, conventional LED chips need to be connected with positive and negative electrodes to make them emit light. Correspondingly, positive and negative wiring pads need to be made on the chip, usually made of gold, which absorbs a lot of blue-green light, which causes light absorption. , which greatly affects the light extraction efficiency

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