Heterogeneous design method for optimizing embedded STT- RAM (Spin-Torque Transfer Random Access Memory) performances and hardware consumption

A technology of STT-RAM and design method, applied in the manufacture/processing of electromagnetic devices, static memory, instruments, etc., can solve the problems of packaging and system integration cost, slow access speed, complex flash memory programming control, etc., to achieve effective Conducive to miniaturization and portable design, reduced packaging and board-level hardware consumption, and low power consumption

Inactive Publication Date: 2012-07-11
XI AN JIAOTONG UNIV
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Problems solved by technology

However, the programming control of flash memory is complicated, and the access speed is slow, which brings a certain complexity to the design of the system chip
[0009] A variety of memory chips with completely different processing technologies bring additional packaging and system integration costs to the electronic system, and at the

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  • Heterogeneous design method for optimizing embedded STT- RAM (Spin-Torque Transfer Random Access Memory) performances and hardware consumption
  • Heterogeneous design method for optimizing embedded STT- RAM (Spin-Torque Transfer Random Access Memory) performances and hardware consumption
  • Heterogeneous design method for optimizing embedded STT- RAM (Spin-Torque Transfer Random Access Memory) performances and hardware consumption

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Embodiment Construction

[0025] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0026] figure 1 Shown is the memory cell structure of STT-RAM. Usually, each STT-RAM memory cell is composed of a magnetic channel junction (Magnetic Tunneling Junction, MTJ) and a control nMOS transistor. The magnetic channel junction is composed of upper and lower ferromagnetic layers and an oxide layer in the middle. The direction of the magnetic field in one of the ferromagnetic layers can be changed under the action of an electric current, which is called the free layer. The direction of the magnetic field in the ferromagnetic layer of the other layer is fixed, which is called the pinned layer. On the level of STT-RAM storage unit, the present invention proposes two heterogeneous design methods.

[0027] 1. By reducing the area of ​​the magnetic channel junction free layer, the write delay and energy consumption of the magnetic channe...

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Abstract

The invention discloses a heterogeneous design method for optimizing embedded STT-RAM (Spin-Torque Transfer Random Access Memory) performances and hardware consumption. Storage characteristics of the STT-RAM are changed by changing the area of a free layer, the size of an nMOS transistor and the size of a memory array of a magnetic tunneling junction (MTJ) on a memory unit of the STT- RAM, and memory modules with different storage characteristics can be integrated in a same chip. Under the condition that the STT-RAM technological process is not changed, the method adopts different structures and circuits to design the STT- RAM modules with completely different storage characteristics, so as to respectively meet various storage requirements of an operation processing unit. Therefore, requirements of a system on chip can be met only by adopting the STT- RAM technology, the storage chip usage is reduced, the capacity of the memory integrated on the system on chip is increased, and furthermore, the STT- RAM performances and the hardware consumption are optimized.

Description

technical field [0001] The present invention relates to a novel memory technology and a computer storage architecture design method, in particular to a heterogeneous design strategy and method for optimizing the overall performance and performance of embedded spin-torque transfer random access memories in high-performance processors and mobile terminal SoC chips Hardware cost. Background technique [0002] Spin-Torque Transfer Random Access Memory (STT-RAM for short), as a new generation of magnetoresistive random access memory (Magnetic RAM) technology, is one of the most concerned new storage technologies in the industry. Compared with traditional memory technology, STT-RAM has many advantages such as non-volatility, high storage density, strong scalability, fast read and write speed, and low static power consumption. and the potential of Universal Memory in high-performance processors. [0003] Adopting STT-RAM as the embedded memory of system-on-chip and processor has ...

Claims

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Application Information

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IPC IPC(8): H01L43/12G11C11/16
CPCG11C11/16
Inventor 孙宏滨闽泰张彤郑南宁
Owner XI AN JIAOTONG UNIV
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