PCM (phase change memory) and forming method thereof

Abstract

The invention provides a PCM (phase change memory) and a forming method thereof. The forming method of the PCM comprises the steps as follows: providing a semiconductor substrate, forming a groove on the semiconductor substrate, and forming epitaxy growth in the groove to form a first epilayer, which is an N-type doped semiconductor material or a P-type doped semiconductor material. According to the invention, the improvement on the film quality of a PN junction can be facilitated, the uniformity of doping concentration of the first epilayer serving as a word line is improved, and the problem of resistance increase of the word line can be avoided.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a phase change memory and a forming method thereof. Background technique [0002] Phase Change Memory (PCM, Phase Change Memory) is a new type of memory, and it is a non-volatile memory that is most likely to replace flash memory (Flash) at a 32nm process node. Its storage principle is that the phase change material undergoes a phase change and switches between a high-resistance state and a low-resistance state to realize the storage function. Generally, heat is generated by applying an electrical signal, so that the phase-change material is mutually converted between a low-resistance crystalline state and a high-resistance amorphous state. The most commonly used phase change materials are chalcogenides, especially germanium-antimony-tellurium (GST, Ge 2 Sb 2 Te 5 ). [0003] The phase-change memory in the prior art generally uses an N-type doped buried layer (NBL, N type BuriedLa...

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Problems solved by technology

[0008] The problem solved by the invention is that the film quality of the PN junction in the phase change memory is poor, and the doping concentration uniformity of the buried layer is poor

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