A solution method for preparing crystalline silicon solar cells

Abstract

The invention discloses a process for preparing a crystalline silicon solar cell by a solution method. The method comprises the steps: adding ethyl alcohol, polyethylene glycol, vinyltrimethoxysilaneand the like into a phosphoric acid solution to serve as a phosphorus diffusion solution source, and uniformly coating the surface of a silicon wafer with diffusion liquid through an ultrasonic atomization spraying method; then diffusing phosphorus at the high temperature to obtain the uniform doping concentration of the surface. According to the invention, the solution spraying method is adoptedto prepare a titanium dioxide anti-reflection film to replace a silicon nitride anti-reflection film prepared by a PECVD method, and a microemulsion composed of anionic polyacrylamide (APAM), isopropanol and the like is added into a titanium tetrachloride solution to serve as a precursor solution of the titanium dioxide film, so that the passivation function of the film on the silicon surface is improved.

Description

technical field

[0001] The invention belongs to the technical field of solar cells, in particular to a process for preparing crystalline silicon solar cells by a solution method. Background technique

[0002] At present, crystalline silicon solar cells have occupied more than 90% of the photovoltaic market. The mainstream crystalline silicon cell preparation processes mainly include: cleaning and texturing, diffusion, removal of phosphosilicate glass, deposition of silicon nitride anti-reflective film, printing electrodes, high temperature sintering Wait. Among them, diffusion is the most critical process, forming a p-n junction through diffusion, generating a built-in electric field, separating photogenerated carriers (electrons and holes), and finally making them collected by two electrodes on the front and rear surfaces of the silicon wafer. At present, the mainstream crystalline silicon cells mainly use p-type crystalline silicon wafers. In the existing industrial produ...