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Manufacturing method for array substrate for liquid crystal display device

A technology for liquid crystal display devices and array substrates, applied in nonlinear optics, instruments, optics, etc., which can solve problems such as overheating, decreased storage stability, and no longer conforming to users

Inactive Publication Date: 2014-12-10
DONGWOO FINE CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the hitherto known etchant composition for etching a double layer comprising a Cu-based metal layer and a Ti-based metal layer no longer meets the needs of users, which requires research and development to improve its performance.
[0006] Specifically, currently available etching solution compositions include peroxides, such as hydrogen peroxide or persulfate as the main oxidizing agent, which undesirably lead to the problem of decreased storage stability due to the self-decomposition of peroxides
In addition, in the case of using hydrogen peroxide as the main oxidizing agent, the concentration of Cu ions in the etchant may increase due to etching, thereby unpredictably causing the risk of overheating due to the decomposition of hydrogen peroxide chains

Method used

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  • Manufacturing method for array substrate for liquid crystal display device
  • Manufacturing method for array substrate for liquid crystal display device

Examples

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Embodiment 1 and comparative example 1

[0038] Example 1 and Comparative Example 1: Preparation of etching solution composition and evaluation of etching performance

[0039] The etching solution compositions of Example 1 and Comparative Example 1 were prepared using the amounts of the components shown in Table 1 below. Additionally, they are used to etch Cu / Ti bilayers.

[0040]

[0041] The etching solution compositions of each of Example 1 and Comparative Example 1 were put into a spray etching machine (model name: ETCHER (TFT), obtained from SEMES Corporation), and then heated at a set temperature of 25°C. Subsequently, an etching process is performed at 30±0.1°C. Subsequently, the test samples were placed in a spray etcher, and each solution was sprayed for etching. After the etching was completed, the test sample was taken out from the etching machine, cleaned with deionized water, dried with a hot air dryer, and then the photoresist was removed with a photoresist stripper. After cleaning and drying, the...

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Abstract

Disclosed is a manufacturing method for an array substrate for a liquid crystal display device. The disclosed method includes: a gate wiring formation step wherein after a double-layer film composed of a copper-based metal film and a titanium-based metal film is formed on a substrate, gate wiring is subsequently formed by etching with an etchant composition; and a source electrode and a drain electrode formation step wherein after the double-layer film composed of a copper-based metal film and a titanium-based metal film is formed, a source electrode and a drain electrode are subsequently formed by etching with an etchant composition. The etchant composition comprises 0.5 to 20 weight % of persulfate compounds; 0.01 to 2.0 weight % of compounds having fluoro-ions ionized in solution; 0.01 to 5.0 weight % of cyclohexylamine compounds which are either unsubstituted or substituted with at least one straight chain or branched chain C1-C4 alkyl group, based on the total weight of the composition, with the remainder of the composition being water. The composition does not contain hydrogen peroxide. Further disclosed are the above etchant composition, and an etching method for the double-layer film composed of a copper-based metal film and a titanium-based metal film.

Description

technical field [0001] The present invention relates to a method for manufacturing an array substrate for a liquid crystal display device, an etching solution composition for etching a double layer containing a copper (Cu)-based metal layer and a titanium (Ti)-based metal layer, and a A method for etching a double layer containing a Cu-based metal layer and a Ti-based metal layer by using the etching solution composition. Background technique [0002] Generally, forming a metal wiring on a substrate for a semiconductor device includes forming a metal layer by sputtering, coating a photoresist, performing exposure and development so that the photoresist is formed on a selected area, and performing etching, and each The cleaning process can be performed before or after each of these independent processes. The etching process is performed using the photoresist as a mask so that the metal layer remains on selected areas, and the etching process generally includes dry etching us...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/136
CPCG02F1/1362G02F1/136
Inventor 秦荣晙宋寅珏
Owner DONGWOO FINE CHEM CO LTD
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