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Vertical type light emitting diode and its manufacturing method

A technology for light-emitting diodes and a manufacturing method, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of poor yield rate of light-emitting diodes and large differences in thermal expansion coefficients, and achieves extended service life, waste heat removal, and high thermal conductivity. Effect

Active Publication Date: 2015-01-28
RITEDIA CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the large difference in thermal expansion coefficient between the epitaxial layer and the metal substrate or the metal bonding layer, the yield rate of the LED is often poor in the subsequent lift-off process.

Method used

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  • Vertical type light emitting diode and its manufacturing method
  • Vertical type light emitting diode and its manufacturing method
  • Vertical type light emitting diode and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] see Figures 2A to 2E , is a specific embodiment of the present invention to manufacture vertical light emitting diodes. First, if Figure 2A As shown, a substrate 201 is provided. In this embodiment, the substrate 201 is a sapphire substrate, and Si, SiC, GaAs, GaP, AlP, GaN, C (graphite), hBN, C (diamond), or a nitride, phosphide, or arsenide substrate in which at least one cation is B, Al, Ga, In, Be, Mg. Then as Figure 2B , forming a semiconductor layer 202 on the substrate 201, the semiconductor layer 202 is a compound composed of II to VI group elements, such as Al 2 o 3 (Sapphire), Si, SiC, GaAs, GaP, AlP, GaN, C (graphite), hBN, C (diamond), or nitrides and phosphides with at least one cation being B, Al, Ga, In, Be, Mg , or arsenide, GaN is used as the semiconductor layer 202 in this embodiment. later as Figure 2C As shown, a metal reflective layer 203 is formed, which is deposited by a cathodic arc and combined with the semiconductor layer 202. The me...

Embodiment 2

[0047] The manufacturing method used in this embodiment is similar to Embodiment 1, so the structure can also be directly referred to as Figure 2EThe difference is that the metal reflective layer 203 (such as silver) is formed on the semiconductor layer 202 (such as GaN) by sputtering during the manufacturing process, and a copper-diamond composite material is used as the composite material layer 206 . Therefore, the thermal expansion coefficient of the composite material layer 206 according to the present embodiment is about 5 ppm / °C. The structures and characteristics of other layers are as defined in Embodiment 1.

Embodiment 3

[0049] Such as image 3 As shown, the manufacturing method used in this embodiment is similar to that of Embodiment 1 and Embodiment 2, the difference is that the intermediate layer 304 and the diamond-like carbon layer 305 are sequentially stacked on each other during the manufacturing process, and the intermediate layer 304 and the The total thickness of the laminated structure of the diamond-like carbon layer 305 is about 3 μm, and a copper-nickel-diamond composite material is used as the composite material layer 306 in this embodiment. Therefore, the thermal expansion coefficient of the composite material layer 306 according to the present embodiment can be adjusted to about 2-10 ppm / ° C. according to the requirements of the process. The structures and characteristics of other layers are as defined in Embodiment 1.

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Abstract

The invention provides a method for manufacturing a vertical type light emitting diode, which comprises the steps of providing a substrate; forming a semiconductor layer on the substrate, wherein the semiconductor layer comprises a compound consisted of group II to group VI elements; forming a metal reflection layer and combining the metal reflection layer with the semiconductor layer; forming at least one intermediate layer and at least one diamond-like carbon layer; and forming a first electrode layer and a second electrode layer, which are respectively arranged on one side of the semiconductor layer and the composite material layer. The at least one intermediate layer and the at least one diamond-like carbon layer are laminated by being mutually stacked on one side of the metal reflection layer. The invention also provides a vertical type light emitting diode prepared according to the above manufacturing method.

Description

technical field [0001] The invention relates to a vertical light emitting diode and its manufacturing method, especially to a vertical light emitting diode with high power and large size and its manufacturing method. Background technique [0002] Since the 1960s, the advantages of low power consumption and long-lasting luminescence of light-emitting diodes have gradually replaced the use of lights or light sources for lighting or various electrical equipment in daily life. What's more, LEDs are developing towards multi-color and high-brightness, and have been applied in large-scale outdoor display signs or traffic signals. [0003] However, the light emitting diode 100 used in the known technology has many structures such as figure 1 As shown, both the positive electrode 107 and the negative electrode 108 are made on the same side. Furthermore, the substrate 101 (such as sapphire) used in the known light-emitting diodes is non-conductive, so the current in the semiconducto...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 宋健民甘明吉林逸樵胡绍中
Owner RITEDIA CORPORATION