Multilayer film structure for preparing polycrystalline silicon thin film
A technology of polycrystalline silicon thin film and amorphous silicon thin film, which is applied in the direction of transistors, layered products, metal layered products, etc., can solve the problems of long annealing time, alignment error, high content of polycrystalline silicon and nickel, and achieve the goal of shortening the crystallization transition time Effect
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example 1
[0030] 1) Refer to figure 1 , first use ionized chemical vapor deposition (PEVCD) to deposit 300nm silicon oxide on the glass substrate of Eagle 2000, and then use low pressure chemical deposition (LPCVD) to deposit a layer of amorphous silicon with a thickness of 50nm at 550°C;
[0031] 2) A silicon dioxide layer with a thickness of about 4 nm is formed on the surface of amorphous silicon, which is then photoetched into uniformly distributed lines with a width of 1.5 μm and a pitch of 30 μm (such as figure 1 CNL in), the length of line is equal to the width of substrate; The solution used is 777, the corrosion time is 1 minute) the mixed solution H 2 SO 4 and H 2 o 2 remove;
[0032] 3) sputtering a nickel layer with a thickness of approximately 5 nm onto the exposed surfaces, i.e. silicon dioxide and wires;
[0033] 4) Then anneal at 590°C for 1 hour, since the crystallization process starts from the amorphous silicon below the uniform distribution line, so figure 1 S...
example 2～5
[0037] According to the method of Example 1, Examples 2-5 were prepared, except that the experimental conditions listed in Table 1 below were different, and the rest were the same.
[0038] Table 1
[0039] example
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Abstract
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