Method for preparing multi-layer-film structure with polycrystalline silicon thin film
A polysilicon thin film and amorphous silicon thin film technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of long annealing time, high polysilicon nickel content, alignment error, etc., and achieve the effect of reducing the content
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example 1
[0027] 1) Refer to figure 1 , first use ionized chemical vapor deposition (PEVCD) to deposit 300nm silicon oxide on the glass substrate of Eagle 2000, and then use low pressure chemical deposition (LPCVD) to deposit a layer of amorphous silicon with a thickness of 50nm at 550°C;
[0028] 2) A silicon dioxide layer with a thickness of about 4 nm is formed on the surface of amorphous silicon, which is then photoetched into uniformly distributed lines with a width of 1.5 μm and a pitch of 30 μm (such as figure 1 CNL in), the length of line is equal to the width of substrate; The solution used is 777, the corrosion time is 1 minute) the mixed solution H 2 SO 4 and H 2 o 2 remove;
[0029] 3) sputtering a nickel layer with a thickness of approximately 5 nm onto the exposed surfaces, i.e. silicon dioxide and wires;
[0030] 4) Then anneal at 590°C for 1 hour, since the crystallization process starts from the amorphous silicon below the uniform distribution line, so figure 1 S...
example 2～5
[0034] According to the method of Example 1, Examples 2-5 were prepared, except that the experimental conditions listed in Table 1 below were different, and the rest were the same.
[0035] Table 1
[0036] example
[0037] It should be understood that the above examples are for illustrative purposes only, and in other embodiments of the present invention, the crystallization nuclei (that is, grooves) may also be arranged in other forms with the same spacing and equal size. Since the metal-induced polysilicon film with band-like continuous crystal domains can be obtained through the completely equal-width crystallization nuclear line defined in advance on the silicon oxide layer, after crystallization, the entire polysilicon film can be made into a high-performance thin film transistor. source layer, so the problem of mask misalignment caused by shrinkage of the glass substrate is resolved.
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Abstract
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