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High-reliability LDMOS (laterally diffused metal oxide semiconductor) power device

A power device and reliable technology, applied in the field of high-reliability LDMOS power devices, can solve the problems of safety and poor reliability of LDMOS power devices, and achieve the effect of extending the electrical safe working area, avoiding damage or burning, and enhancing the reliability of the device.

Active Publication Date: 2012-07-25
扬州江新电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem of poor safety and reliability of LDMOS power devices in the prior art, and to provide a highly reliable LDMOS power device

Method used

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  • High-reliability LDMOS (laterally diffused metal oxide semiconductor) power device
  • High-reliability LDMOS (laterally diffused metal oxide semiconductor) power device
  • High-reliability LDMOS (laterally diffused metal oxide semiconductor) power device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Such as figure 2 As shown, is a schematic top view of the first novel high-reliability LDMOS power device according to an embodiment of the present invention. 21 is a body contact region, 22 is an LDMOS gate, 23 is a source implantation region forming a device source, 24 is a drain implantation region forming a device drain, 25 is a drift region, and 26 is a contact hole. In this embodiment, the body contact region 21 is formed in the drain implant region 24 and is completely isolated from the drain implant region 24 and the drift region 25 by the STI isolation region 27 . The shape, size, and quantity of the body contact area 21 can be adjusted according to requirements. For example, when the width of a single finger grid is less than 50 microns, a hexagonal body contact area 21 with a width of 5 microns can meet the demand; when the width of a single finger grid is greater than 50 microns, multiple The effect produced by a 5 micron wide hexagonal body contact region...

Embodiment 2

[0034] Such as image 3 As shown in FIG. 2 , it is a schematic top view of the second novel high-reliability LDMOS power device according to the embodiment of the present invention. 31 is a body contact region, 32 is an LDMOS gate, 33 is a source implantation region forming a device source, 34 is a drain implantation region forming a device drain, 35 is a drift region, and 36 is a contact hole. In this embodiment, the body contact region 31 is formed in the drain implant region 34 , and is completely isolated from the drain implant region 34 and the drift region 35 by the STI isolation region 37 . The shape of the STI isolation region 37 is as image 3 As shown, it runs through the drain implantation region 34 and must meet the condition that the STI isolation region 37 completely covers the body contact region 31 and completely isolates the drain implantation region 34 and the drift region 35 . The body contact region 31 is drawn out from the contact hole 36, and can be sel...

Embodiment 3

[0037] Such as Figure 4 As shown in FIG. 2 , it is a schematic top view of the third novel high-reliability LDMOS power device according to the embodiment of the present invention. 41 is a body contact region, 42 is an LDMOS gate, 43 is a source implantation region forming a device source, 44 is a drain implantation region forming a device drain, 45 is a drift region, and 46 is a contact hole. In this embodiment, the body contact region 41 is formed in the drain implant region 44 and completely isolated from the drain implant region 44 and the drift region 45 by the FOX isolation region 47 . The scope of the FOX isolation region 47 occupies a larger area than the STI isolation region, and it may not be completely included in the drain implantation region 44, such as Figure 4 As shown, this is allowed. The shape, size and quantity of the body contact area 41 can be adjusted according to requirements. For example, when the width of the single finger grid is less than 100 mic...

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Abstract

The invention discloses a high-reliability LDMOS (laterally diffused metal oxide semiconductor) power device which comprises a body contact area and an isolation area, wherein the isolation area is arranged between the drain-end injection area of the LDMOS power device and the body contact area; the isolation area is arranged between the drift area of the LDMOS power device and the body contact area; and a carrier near the body contact area is led out and extracted through body lead-out to control the electric potential near the body contact area. In the high-reliability LDMOS power device provided by the invention, the body contact area is formed near the drain-end injection area or drift area of the LDMOS power device through the means of STI (shallow trench isolation), FOX isolation and the like, and the carrier near the body contact area is led out and extracted through body lead-out to control the electric potential near the body contact area, thereby avoiding the damage or burning of the LDMOS device caused by the opening of a parasitic transistor initiated by noise current or collision current, expanding the electrical safe working area of the LDMOS power device and improving the reliability of the device.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a highly reliable LDMOS power device. Background technique [0002] LDMOS (Lateral Double Diffused Metal Oxide Semiconductor Field Effect Transistor) has high gain, wide linear range and low intermodulation distortion, and is suitable for radio frequency applications. Due to the high input impedance of the field control device and the negative temperature coefficient of the current, it is possible to complete the multi-unit parallel connection that bipolar transistors do not have, and realize the high current operation with low on-resistance. Because multiple units work in parallel, it is easy to use the rest of the units to realize multiple functions such as overvoltage, overcurrent, and overheat protection. The existence of the drift region plays a role in isolating the drain from the channel, so the channel modulation is weakened. After decades of continuous develo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06
Inventor 姜一波杜寰
Owner 扬州江新电子有限公司