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Light-emitting diode (LED) with omnidirectional reflector and manufacturing method of LED

A technology of omni-directional mirrors and light-emitting diodes, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve problems such as poor adhesion

Active Publication Date: 2012-07-25
XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The main purpose of the present invention is to provide a gallium nitride-based light-emitting diode with an omnidirectional reflector and a manufacturing method thereof, by inserting a gallium oxide layer between silver and an oxide light-transmitting dielectric material layer to solve the problem of both The problem of poor adhesion between

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  • Light-emitting diode (LED) with omnidirectional reflector and manufacturing method of LED
  • Light-emitting diode (LED) with omnidirectional reflector and manufacturing method of LED

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Embodiment Construction

[0032] The implementation of the present invention will be described in detail below in conjunction with the accompanying drawings and examples, so as to fully understand and implement the process of how to apply technical means to solve technical problems and achieve technical effects in the present invention. It should be noted that, as long as there is no conflict, each embodiment and each feature in each embodiment of the present invention can be combined with each other, and the formed technical solutions are all within the protection scope of the present invention.

[0033] as attached figure 1 A gallium nitride-based light-emitting diode structure with an omnidirectional reflector is shown, including a sapphire substrate 100, a buffer layer 101, an n-GaN layer 102, a multi-quantum well active layer 103, a p-GaN layer 104, an ITO Transparent conductive layer 110, P electrode 111, N electrode 112, 6 pairs of TiO 2 / SiO 2 DBR 120 , gallium oxide layer 130 , gallium silv...

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Abstract

The invention discloses a gallium nitride-based light-emitting diode (LED) with an omnidirectional reflector and a manufacturing method of the gallium nitride-based LED. The gallium nitride-based LED with the omnidirectional reflector comprises a sapphire substrate and a gallium nitride-based epitaxial lamination, wherein the gallium nitride-based epitaxial lamination is formed on a first surface of the sapphire substrate; the gallium nitride-based epitaxial lamination comprises an N-type gallium nitride-based epitaxial layer, a P-type gallium nitride-based epitaxial layer and a light-emitting layer located between the N-type gallium nitride-based epitaxial layer and the P-type gallium nitride-based epitaxial layer; the omnidirectional reflector is formed a second surface of the sapphire substrate, which is opposite to the first surface; and moreover, from the second surface, the back-plated omnidirectional reflector comprises a plurality of layers of diaphanous dielectric layer piles, a gallium oxide layer and a silver reflecting layer in sequence, wherein the refractive indexes of the diaphanous dielectric layer piles are periodically and alternately changed ups and downs. Through inserting the gallium oxide layer between a silver diaphanous dielectric material layer and an oxide diaphanous dielectric material layer, the problem that the adhesion between the silver diaphanous dielectric material layer and the oxide diaphanous dielectric material layer is poor is solved.

Description

technical field [0001] The invention relates to a light-emitting diode and a manufacturing method thereof, more specifically, to a gallium nitride-based light-emitting diode with an omnidirectional reflector coated on the back and a manufacturing method thereof. Background technique [0002] In recent years, semiconductor lighting technology represented by gallium nitride-based wide bandgap semiconductor materials has developed rapidly. Gallium nitride-based light-emitting diode devices have been widely used in various fields such as display, indication, backlight and lighting. At present, the mainstream GaN-based light-emitting diode chips can be divided into three types according to the structure: front-mount, flip-chip, and vertical. Among them, the front-mount structure with insulating sapphire as the substrate is the most common and widely adopted by the industry. For front-mounted LEDs, in order to reduce the reduction in light extraction efficiency caused by poor r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/02H01L33/10H01L33/00
Inventor 潘群峰
Owner XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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