SiO2 antireflection thin film and preparation method thereof

An anti-reflection and thin-film technology, applied in the field of SiO2 anti-reflection thin film and its preparation, can solve the problems that the thin film cannot be used for a long time, easily absorb water, dust, and hollow particles with large particle size, and achieves low preparation cost and increased wiping resistance. , Easy to operate effect

Active Publication Date: 2012-08-01
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
View PDF6 Cites 37 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, regardless of the above-mentioned porous SiO treated with ammonia atmosphere or acid-catalyzed by template method 2 Films all have a common disadvantage: all pores are open, directly communicated with the atmosphere, and the surface is covered with a large number of hydroxyl groups, which are easy to absorb water, dust, etc., which instead leads to...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • SiO2 antireflection thin film and preparation method thereof
  • SiO2 antireflection thin film and preparation method thereof
  • SiO2 antireflection thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] According to TEOS, deionized water in ammonia water, ammonia in ammonia water (NH 3 ), the mol ratio of absolute ethanol and PAA is 1: 67: 28: 530: 0.015 configuration raw material;

[0042]Disperse PAA (average molecular weight 3000) in ammonia water, stir evenly, add to absolute ethanol, stir evenly in a magnetic stirrer, then add TEOS in 5 times in equal amounts, with an interval of 1 hour between each time. After adding all TEOS, continue to stir for 10h to obtain light blue SiO 2 Nano hollow particle sol (ie dispersion). The SiO 2 The TEM image of the hollow particle sol is as follows figure 1 , SiO 2 The shape of hollow particles is regular, the wall thickness is uniform, the size distribution range is small, SiO 2 The particle size of the hollow particle is 30nm-45nm, the wall thickness is 5nm, and the relative standard deviation of the particle size is 6%.

[0043] Acid-catalyzed SiO 2 The sol is obtained by hydrolysis of TEOS, with hydrochloric acid (HCl...

Embodiment 2

[0051] According to TEOS, deionized water in ammonia water, ammonia in ammonia water (NH 3 ), the mol ratio of absolute ethanol and PAA is 1: 48: 20: 375: 0.014 configuration raw material;

[0052] Disperse PAA (average molecular weight 3000) in ammonia water, stir evenly, add to absolute ethanol, stir evenly in a magnetic stirrer, then add TEOS in 5 times in equal amounts, with an interval of 1 hour between each time. After adding all TEOS, continue to stir for 10h to obtain blue-white SiO 2 Hollow particle sol. The SiO 2 SiO in hollow particle sol 2 Hollow particles have regular shape and uniform wall thickness, SiO 2 The particle size of the hollow particle is 60nm-120nm, the wall thickness is 5nm, and the relative standard deviation of the particle size is 21%.

[0053] All the other operations are the same as in Example 1, preparing SiO 2 Anti-reflection film, the related properties of the film are shown in Table 1.

Embodiment 3

[0055] According to TEOS, deionized water in ammonia water, ammonia in ammonia water (NH 3 ), the mol ratio of absolute ethanol and PAA is 1: 90: 37: 700: 0.02 configuration raw material;

[0056] Disperse PAA (average molecular weight 3000) in ammonia water, stir evenly, add to absolute ethanol, stir evenly in a magnetic stirrer, then add TEOS in 5 times in equal amounts, with an interval of 1 hour between each time. After adding all TEOS, continue to stir for 10h to obtain light blue SiO 2 Hollow particle sol. The SiO 2 SiO in hollow particle sol 2 Hollow particles have regular shape and uniform wall thickness, SiO 2 The particle size of the hollow particle is 30nm-45nm, the wall thickness is 3nm, the relative standard deviation of the particle size is 12%, and there are broken particles.

[0057] All the other operations are the same as in Example 1, preparing SiO 2 Anti-reflection film, the related properties of the film are shown in Table 1.

[0058] Under the obse...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Particle sizeaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a SiO2 antireflection thin film. The SiO2 antireflection thin film comprises a photovoltaic glass substrate, and a first SiO2 dense layer in the thickness of 10nm-30nm and a SiO2 nano hollow granular layer in the thickness of 50nm-300nm, which are sequentially coated on the photovoltaic glass substrate, as well as second SiO2 dense material filled in pores among SiO2 nano hollow granules in the SiO2 nano hollow granular layer; and the filling total amount of the second SiO2 dense material is equivalent to the amount of the SiO2 dense material in the first SiO2 dense layer in the thickness of 5nm-30nm. The thin film has excellent antireflection performance, resistance to wiping and durability. The invention further discloses a preparation method of the SiO2 antireflection thin film, and the preparation method comprises the following steps: preparing the first SiO2 dense layer on photovoltaic glass, further preparing the SiO2 nano hollow granular layer, filling the second SiO2 dense material and performing high-temperature treatment to obtain the SiO2 antireflection thin film. The method is simple to operate and suitable for industrial large-scale application.

Description

technical field [0001] The invention relates to the field of anti-reflection films, in particular to a SiO 2 Anti-reflection film and its preparation method. Background technique [0002] Energy issues and environmental issues make people place great expectations on solar cells, so people have developed a variety of solar cell technologies, and continuously improving the efficiency of solar cells has always been an important challenge in solar cell technology. For solar panel components, a layer of photovoltaic glass is required to protect the cells. However, when light passes through the glass from the air, due to the mismatch of the refractive index between the air and the glass, there will be an 8% reflection loss, resulting in a decrease in the amount of light entering the cell, which in turn affects the improvement of cell efficiency. A common solution is to coat the glass surface with an anti-reflection film, which can effectively reduce the reflection of light, allo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C03C17/23
Inventor 宋伟杰兰品军李佳鲁越晖杨晔谭瑞琴
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap