Method of adopting gray scale mode in write-through photoetching system to improve exposure graph quality

A lithography system and a technology for exposing graphics, which are applied in microlithography exposure equipment, photolithography exposure devices, etc., can solve the problems of increasing hardware costs, affecting production capacity, and increasing the time consumption of the exposure system of lithography machines. Guarantee production capacity and achieve simple effects

Active Publication Date: 2012-08-01
TIANJIN JINXIN MICROELECTRONICS TECH CO LTD
View PDF5 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The former will increase the hardware cost, and it will also involve the positional relationship between different lenses requiring high-precision calibration; the latter will increase the time consumption of the exposure system of the lithography machine and affect the production capacity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of adopting gray scale mode in write-through photoetching system to improve exposure graph quality
  • Method of adopting gray scale mode in write-through photoetching system to improve exposure graph quality
  • Method of adopting gray scale mode in write-through photoetching system to improve exposure graph quality

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] Such as figure 1 As shown, the method for improving the quality of exposure patterns in the direct-writing lithography system using gray scale includes a telecentric imaging system composed of an exposure light source 1, a condenser lens system 2, a spatial light modulator 3, an eyepiece 4 and an objective lens 5, and a substrate. 6. The light emitted by the exposure light source 1 is converged and homogenized by the condenser lens system 2 and then incident on the spatial light modulator 3 at a certain angle θ. After being modulated by the spatial light modulator 3, the incident light is imaged on the substrate 6 through the telecentric imaging system (mask plate or wafer), the characteristic pattern generated by the micromirror array of the spatial light modulator 3 must be processed before being transmitted to the spatial light modulator 3, and the exposure light source is turned on at the same time, and the characteristic pattern is transferred to the substrate; ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method of adopting a gray scale mode in a write-through photoetching system to improve exposure graph quality. Characteristic graphs need to be processed before being sent to a spatial light modulator, and simultaneously an exposure light source is turned on to transfer the characteristic graphs onto a substrate. A process flow includes the following steps that first the characteristic graphs are processed to be bitmap data with graph information through image rasterization; then gray scale data are obtained after edge gray scale processing; and the gray scale data are converted to gray scale energy through a gray scale-energy lookup table and then transmitted to the spatial light modulator. The method does not require additional edge outline smoothing or high-accuracy locating through a workpiece platform. The method is simple to achieve, and achieves improvement of resolution ratio of the write-through photoetching system and exposure graph quality while ensuring capacity of the write-through photoetching system.

Description

technical field [0001] The invention relates to the technical field of lithography in the semiconductor industry, and belongs to a method for improving the quality of exposure patterns by adopting a grayscale method, in particular a method for improving the quality of exposure patterns by adopting a grayscale method for a direct-writing photolithography machine using a spatial light modulator. Background technique [0002] Photolithography is used to print a pattern of features on the surface of a substrate. Such substrates may include chips used in the manufacture of semiconductor devices, various integrated circuits, flat panel displays (eg, liquid crystal displays), circuit boards, biochips, micromechanical electronic chips, optoelectronic circuit chips, and the like. [0003] In modern microelectronics, the manufacture of integrated circuits is a precision microfabrication technology, including a series of processes such as photolithography, ion implantation, etching, ep...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
Inventor 卢云君李显杰刘文海
Owner TIANJIN JINXIN MICROELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap