Maskless exposure system and exposure method thereof

Abstract

The invention provides a maskless exposure system and an exposure method thereof. The maskless exposure system comprises a laser light source, a half-wave plate, a beam splitter mirror, a first light intensity attenuator, a first electric shutter, a first reflecting mirror, a beam expanding mirror, a collimating mirror, a mask support plate, a Fourier transform lens, a photorefractive crystal, a second reflecting mirror, a second light intensity attenuator, a second electric shutter, an imaging lens and a wafer support frame. Due to the adoption of the maskless exposure system provided by the invention, the quantity of masks can be reduced greatly, and cost of the masks caused by the use of multiple sets of masks is lowered.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a maskless exposure system and an exposure method thereof. Background technique [0002] Photolithography is one of the most critical technologies in the semiconductor manufacturing industry. Its exposure technology can be divided into traditional optical exposure, electron beam exposure, ion beam exposure and X-ray exposure. [0003] Contact exposure in traditional optical exposure technology can obtain higher resolution, but the result of repeated contact between the mask and the wafer is to generate defects on the mask, which will be copied repeatedly to the wafer, resulting in product yield drops. Although the proximity exposure avoids the defects caused by the contact exposure, the sharp decrease in resolution is caused by the increase of the gap. Projection exposure uses the principle of optical projection imaging to project the mask onto the wafer f...

AI Technical Summary

Problems solved by technology

X-ray exposure is still in the experimental development stage and has not yet been used for mass production

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