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Silicon-based Giant magnetoresistive device with low power consumption and preparation method thereof

A giant magnetoresistance, silicon-based technology, applied in the field of low-power silicon-based giant magnetoresistance devices and its preparation, can solve problems such as not meeting industrial-grade requirements, and achieve the effect of a simple method

Inactive Publication Date: 2012-08-01
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, it can be seen that 10% reluctance at room temperature and 700 Oe is still not up to industrial grade requirements - 10% or more reluctance at room temperature and 10 Oe

Method used

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  • Silicon-based Giant magnetoresistive device with low power consumption and preparation method thereof
  • Silicon-based Giant magnetoresistive device with low power consumption and preparation method thereof
  • Silicon-based Giant magnetoresistive device with low power consumption and preparation method thereof

Examples

Experimental program
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Effect test

example 1

[0023] Example 1: Preparation of Au / SiO-based 2 Low-power silicon-based giant magnetoresistive device with / Si Schottky contact

[0024] The silicon-based giant magnetoresistive device of this embodiment is provided with SiO on the surface of the single crystal n-type silicon wafer. 2 layer, the SiO 2 There are four non-magnetic metallic electrodes on the layer, and these four electrodes are respectively located at the four vertices of a rectangle, and the two adjacent electrodes are connected to the SiO 2The contacts between / Si are all Schottky contacts with high potential barriers (the electrode material is gold), and the other two electrodes are connected to SiO 2 The contacts between Si / Si are all Schottky contacts with low potential barrier (the electrode material is indium).

[0025] The potential barrier height of the high potential barrier Schottky contact is 0.80eV, and the potential barrier height of the low potential barrier Schottky contact is 0.20eV.

[0026]...

example 2

[0034] Example 2: Preparation based on Pt / SiO 2 Low-power silicon-based giant magnetoresistive device with / Si Schottky contact

[0035] The silicon-based giant magnetoresistive device of this embodiment is provided with SiO on the surface of the single crystal n-type silicon wafer. 2 layer, the SiO 2 There are four non-magnetic metallic electrodes on the layer, and these four electrodes are respectively located at the four vertices of a rectangle, and the two adjacent electrodes are connected to the SiO 2 The contacts between / Si are all Schottky contacts with high potential barriers (the electrode material is platinum), and the other two electrodes are connected to SiO 2 The contacts between Si / Si are all Schottky contacts with low potential barrier (the electrode material is indium).

[0036] The barrier height of the high barrier Schottky contact is 0.88eV, and the barrier height of the low barrier Schottky contact is 0.24eV.

[0037] Among the four electrodes, the spa...

example 3

[0044] Example 3: Preparation of Ag / SiO-based 2 Low-power silicon-based giant magnetoresistive device with / Si Schottky contact

[0045] The silicon-based giant magnetoresistive device of this embodiment is provided with SiO on the surface of the single crystal n-type silicon wafer. 2 layer, the SiO 2 There are four non-magnetic metallic electrodes on the layer, and these four electrodes are respectively located at the four vertices of a rectangle, and the two adjacent electrodes are connected to the SiO 2 The contacts between / Si are all Schottky contacts with high potential barriers (the electrode material is silver), and the other two electrodes are connected to SiO 2 The contacts between Si / Si are all Schottky contacts with low potential barrier (the electrode material is indium).

[0046] The barrier height of the high barrier Schottky contact is 0.68eV, and the barrier height of the low barrier Schottky contact is 0.20eV.

[0047] Among the four electrodes, the spaci...

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Abstract

The invention discloses a silicon-based Giant magnetoresistive device with low power consumption and a preparation method of the silicon-based Giant magnetoresistive device, belonging to the technical field of magnetic storage, magnetic record and magnetic sensing. A SiO2 layer is arranged on the surface of a monocrystal n-type silicon wafer; four nonmagnetic metallic electrodes are arranged on the SiO2 layer; and the four electrodes are located on the four vertexes of a rectangle respectively, wherein the contact between the two adjacent electrodes and SiO2 / Si are Schottky contact with a high potential barrier, and the contact between the other two electrodes and the SiO2 / Si are ohmic contact or Schottky contact with a low potential barrier. The silicon-based Giant magnetoresistive device disclosed by the invention can be used for magnetic storage / record / sensing industries for the reading head of a magnetic disc, etc. The method disclosed by the invention is simple and easy in operation; the excellent ones in the prepared devices can present a magnetic resistance not lower than 10% under an ultra-low magnetic field of 10 oersteds, which achieves a magnetic storage / record / sensing industrial-level application standard; moreover, the magnitude of the power consumption density of the device is not higher than 10 mW / cm<2>.

Description

technical field [0001] The invention belongs to the technical fields of magnetic storage, magnetic recording and magnetic sensing, and in particular relates to a low-power silicon-based giant magnetoresistance device and a preparation method thereof. Background technique [0002] At present, the core basis of the magnetic storage, magnetic recording and magnetic sensing industries is the magnetoresistance effect which is very sensitive to low magnetic fields (the magnetoresistance effect is referred to as magnetoresistance or magnetoresistance effect for short). The materials currently used in the industry to express the magnetoresistance effect are mainly magnetic metal materials [Journal of Magnetism and Magnetic Materials, 151, 324-332 (1995); Annual Review of Materials Science, 25, 357-388 (1995)]. For a long time, as the core material of the semiconductor industry, the magnetoresistance effect expressed by non-magnetic semiconductor materials has also attracted a lot of...

Claims

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Application Information

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IPC IPC(8): H01L43/08H01L43/12
Inventor 罗俊朱静
Owner TSINGHUA UNIV