Method for etching electrode layer on oxide semiconductor
An oxide semiconductor and electrode layer technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as application limitations, increase process costs, affect the performance of oxide semiconductors, etc., to simplify the process flow and save the process. cost effect
Active Publication Date: 2015-05-27
GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH
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Problems solved by technology
[0006] At present, it is generally used in the world to add an etching stopper layer to protect the underlying oxide semiconductor layer from the etchant of the metal source and drain electrodes, but this method adds a thin film and a photolithography process. , thus increasing the process cost
There are also some research groups that use dry etching to etch metal source and drain electrodes, but dry etching ions will seriously affect the performance of oxide semiconductors, and dry etching also requires expensive vacuum ion equipment, so , the application of this method is greatly limited
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[0033] An embodiment of the present invention provides an etching method for an upper electrode layer of an oxide semiconductor, which is used to directly etch a metal electrode on an oxide semiconductor using a wet etching method.
[0034] An embodiment of the etching method of the oxide semiconductor upper electrode layer in the embodiment of the present invention includes:
[0035] preparing an electrode layer containing molybdenum on the oxide semiconductor layer;
[0036] An etching solution containing hydrogen peroxide is used to etch the electrode layer containing molybdenum. Specifically, the electrodes may be source electrodes and drain electrodes.
[0037] figure 1 It is a structural schematic diagram of a thin film transistor prepared by using the etching method of the oxide semiconductor upper electrode layer of the present invention.
[0038] The present invention uses molybdenum metal or molybdenum alloy to prepare the electrode layer. Since hydrogen peroxide c...
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Abstract
The embodiment of the invention discloses a method for etching an electrode layer on an oxide semiconductor. The method is used for directly etching a metal electrode on the oxide semiconductor by using a wet etching process. The method disclosed by the embodiment of the invention comprises the following steps of: preparing an electrode layer containing molybdenum on the oxide semiconductor; and etching an electrode of the electrode layer containing the molybdenum by using an etching solution containing oxydol.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to an etching method for an oxide semiconductor upper electrode layer. Background technique [0002] In recent years, thin film field-effect transistors (TFT, Thin Film Transistor) based on oxide semiconductors have received more and more attention in the field of flat panel displays, especially in the field of organic light-emitting diodes (OLED, Organic Light-Emitting Diode). The materials currently used in the semiconductor oxide semiconductor layer of TFTs for flat panel displays are mainly silicon materials, including amorphous silicon (a-Si: H), polycrystalline silicon, and microcrystalline silicon. [0003] However, amorphous silicon TFT has light sensitivity, low mobility (<1cm 2 / Vs) and poor stability; although polysilicon TFT has high mobility, its electrical uniformity is poor due to the influence of grain boundaries, and the high temperature and high cost of ...
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IPC IPC(8): H01L21/3213
Inventor 兰林锋徐华徐苗陶洪邹建华王磊彭俊彪
Owner GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH