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Through-silicon via structure and method of forming the same

A technology of through-silicon vias and apertures, which is applied in semiconductor/solid-state device components, semiconductor devices, electrical components, etc., and can solve problems such as increased process difficulty

Active Publication Date: 2016-03-30
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] The problem solved by the present invention is that in the prior art, with the increase of the aspect ratio of the through hole, the process difficulty of the through-silicon through-hole structure based on the copper interconnection process increases.

Method used

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  • Through-silicon via structure and method of forming the same
  • Through-silicon via structure and method of forming the same
  • Through-silicon via structure and method of forming the same

Examples

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no. 1 example

[0064] Figure 7 to Figure 14 A cross-sectional view of the intermediate structure showing the first embodiment of the method for forming the through-silicon via structure, combined below Image 6 with Figure 7 to Figure 14 The first embodiment will be described in detail.

[0065] to combine Image 6 with Figure 7 , performing step S21, providing a semiconductor substrate, where the semiconductor substrate includes an upper surface and a lower surface opposite to each other. Specifically, such as Figure 7 As shown, a semiconductor substrate 20 is provided having opposing upper and lower surfaces. The material of the semiconductor substrate 20 may be a silicon substrate, a silicon germanium substrate, a III-V group element compound substrate, a silicon carbide substrate or a stacked structure thereof, or a silicon-on-insulator structure, or known to those skilled in the art. other semiconductor material substrates. In this embodiment, the semiconductor substrate 20 i...

no. 2 example

[0079] Figure 15 to Figure 19 A cross-sectional view of an intermediate structure showing a second embodiment of a method for forming a through-silicon via structure, the following refers to Figure 15 to Figure 19 The second embodiment will be described in detail.

[0080] first formed as Figure 15 The structure includes: a semiconductor substrate 30; an opening formed on the upper surface of the semiconductor substrate 30, the opening is filled with connecting nails 36, and the opening specifically includes a first opening and a second opening connected up and down, wherein The aperture of the first opening is larger than the aperture of the second opening. For the formation method of this structure, refer to the foregoing first embodiment, and details will not be repeated here.

[0081] later reference Figure 16 with Figure 17 , form a fourth photoresist layer 37 and pattern it, and use the patterned fourth photoresist layer 37 as a mask to etch the etchable conduc...

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Abstract

The invention provides a through-silicon-via structure and a forming method thereof. The forming method comprises the following steps: providing a semiconductor substrate, wherein the semiconductor substrate which comprises an upper surface and a lower surface which are opposite; etching the upper surface of the semiconductor substrate to form an opening; depositing and filling an etching conductive material in the opening to form a connecting nail; thinning the lower surface of the semiconductor substrate so as to expose the connecting nail. The forming method is advantageous to improve the reliability of the through-silicon-via structure, and can be applied to a plurality of semiconductor production lines.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a through-silicon via structure and a forming method thereof. Background technique [0002] 3D packaging vertically stacks and packages two or more integrated circuits in the same chip, thereby reducing the occupied space. The substrates commonly used in 3D packaging to carry integrated circuits often have a through-silicon via structure (TSV, Through-Silicon -Vias). By using TSV structure instead of traditional edge wiring for 3D packaging, more logic functions can be integrated in a small device package (footprint). In addition, the adoption of the TSV structure can effectively shorten the critical path, reduce the delay, and increase the speed of the device. [0003] The through-silicon via structure is mainly realized by forming a through-hole on the semiconductor substrate and filling it to form a nail, and then connecting the nail to another wafer or an interconnec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/48H01L21/768
Inventor 赵超陈大鹏欧文
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI