Quadruple-junction cascading solar battery and fabrication method thereof

A solar cell and cascading technology, applied in the field of solar cells, can solve the problems of high manufacturing process requirements, complex process, and high cost, and achieve the effects of simple process, reduced growth difficulty, and high yield

Inactive Publication Date: 2012-08-29
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In comparison, the first two methods have higher requirements on the preparation process. Although the second method is simple to grow, it requires two kinds of substrates and the process is complicated, resulting in high cost. The third method is simple in process and low in cost. Making it a potentially ideal growth preparation method for GaInP / GaAs / InGaAsP / InGaAs four-crystal lattice-mismatch cells

Method used

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  • Quadruple-junction cascading solar battery and fabrication method thereof
  • Quadruple-junction cascading solar battery and fabrication method thereof
  • Quadruple-junction cascading solar battery and fabrication method thereof

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no. 1 Embodiment approach

[0027] figure 1 Shown is a schematic structural view of the first specific embodiment of the four-junction cascaded solar cell of the present invention.

[0028] This embodiment provides a GaInP / GaAs / InGaAsP / InGaAs four-junction cascaded solar cell grown based on the lattice transformation method, which includes an InP substrate layer 01, and InGaAs sub-cells 28, first Tunnel junction 29 , InGaAsP subcell 30 , second tunnel junction 31 , graded transition layer 15 , GaAs subcell 32 , third tunnel junction 33 , GaInP subcell 34 and GaAs contact layer 27 .

[0029] The four-junction cascaded solar cell uses InP as a substrate, which improves the radiation resistance of the cell.

[0030] The four-junction cascaded solar cell is grown by a formal growth method. The top layer GaInP subcell 34 / GaAs subcell 32 is lattice matched to GaAs, and the bottom layer InGaAsP subcell 30 / InGaAs subcell 28 is lattice matched to InP. Wherein, the band gap combinations of the InGaAs sub-cell 2...

no. 2 Embodiment approach

[0043] This embodiment provides a figure 1 In the preparation method of the four-junction cascaded solar cell, the InGaAs sub-cell 28, the first tunnel junction 29, the InGaAsP sub-cell 30, the second tunnel junction 31, and the gradient transition Layer 15 , GaAs subcell 32 , third tunnel junction 33 and GaInP subcell 34 .

[0044] The above-mentioned method for preparing a four-junction cascaded solar cell further includes the step of: growing a GaAs contact layer 27 on the exposed surface of the GaInP sub-cell 34 .

[0045] As an optional implementation, it further includes the step of: growing a fourth tunnel junction between the InP substrate layer 01 and the InGaAs sub-cell 28, the fourth tunnel junction includes N Type doped InGaAs (P) or InP layer and P-type doped InGaAs (P) or InP layer.

[0046] In this embodiment, the preparation method of the four-junction cascaded solar cell further includes the preparation steps of preparing the upper electrode 36 and the lower...

Embodiment 1

[0056] In this embodiment, a method for preparing a GaInP / GaAs / InGaAsP / InGaAs four-junction cascaded solar cell grown by a lattice anomaly growth method based on an InP substrate is provided, comprising the following steps:

[0057] (1) GaInP / GaAs / InGaAsP / InGaAs four-junction cascaded solar cells are grown by MOCVD (Metal Organic Chemical Vapor Deposition, metal organic compound chemical vapor deposition) method, and its structure is as follows figure 1 Shown:

[0058] (1) On the substrate layer 01 of InP with P-type doping, grow with a P-type doping concentration of about 1×10 18 cm -3 The 0.3 micron InP is used as the first back field layer 02 and the P-type doping concentration is about 2×10 17 cm -3 2.5 μm InGaAs is used as the first base region 03 of the InGaAs sub-cell 28, and then grown with an N-type doping concentration of approximately 2×10 18 cm -3 0.2 micron InGaAs is used as the first emitter region 04 of the InGaAs sub-cell 28, regrown with an N-type dopi...

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Abstract

The invention provides a quadruple-junction cascading solar battery which comprises an InP substrate layer, and an InGaAs sub-battery, a first tunnel junction, an InGaAsP sub-battery, a second tunnel junction, a gradual transition layer, a GaAs sub-battery, a third tunnel junction, a GaInP sub-battery and a GaAs contact layer that are arranged on the substrate layer sequentially. The invention further provides a fabrication method of the quadruple-junction cascading solar battery, which comprises the step of allowing the InGaAs sub-battery, the first tunnel junction, the InGaAsP sub-battery, the second tunnel junction, the gradual transition layer, the GaAs sub-battery, the third tunnel junction, the GaInP sub-battery and the GaAs contact layer to be grown on the InP substrate layer.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a four-junction cascaded solar cell and a preparation method thereof. Background technique [0002] In the field of solar cells, GaInP / (In)GaAs / Ge three-crystal lattice-matched cells and GaInP / GaAs / InGaAs three-crystal lattice-mismatched cells are currently the most researched systems. The former currently achieves a maximum conversion efficiency of 32%-33% under one sun. However, there is still a major problem in this system, which is restricted by lattice matching. The Ge battery in the three-junction battery covers a wider spectrum, and its short-circuit current can reach twice that of the other two-junction batteries. Due to the three-junction batteries connected in series Due to constraints, the energy of the solar spectrum corresponding to the Ge cell has not been fully converted and utilized, so there is still room for improvement in the efficiency of the triple-junction cell. ...

Claims

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Application Information

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IPC IPC(8): H01L31/0725H01L31/0735H01L31/18
CPCY02E10/50Y02E10/544Y02P70/50
Inventor 李奎龙孙玉润于淑珍赵勇明赵春雨董建荣杨辉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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