Selective wool fabricating method for solar battery

A solar cell and selective technology, applied in chemical instruments and methods, circuits, electrical components, etc., can solve the problems of affecting cell conversion efficiency, affecting metal sintering, contact resistance, etc., to improve photoelectric conversion efficiency, reduce contact resistance, Guaranteed effect of suede reflectivity

Inactive Publication Date: 2012-08-29
MOTECH SUZHOU NEW ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Pyramid texture has a positive effect on the absorption of light, but the presence of pyramids also affects the sintering of the metal
The main reason is that the pyramid suede surface has ups and downs, and it is difficult to form a good contact with conductive pastes such as Ag paste and Al paste, resulting in high contact resistance (series resistance Rs) in solar cell performance, which ultimately affects the conversion of the battery. efficiency

Method used

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  • Selective wool fabricating method for solar battery
  • Selective wool fabricating method for solar battery
  • Selective wool fabricating method for solar battery

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Embodiment Construction

[0024] The specific implementation steps of the present invention will be further described below in conjunction with the accompanying drawings, which are not drawn to scale for the convenience of illustration.

[0025] Utilize the selective texturing method of the present invention to make solar cell, comprise the following steps:

[0026] First, see figure 1 , for selective texturing of monocrystalline silicon wafers:

[0027] Step 1. Make a mask on the surface of the single crystal silicon wafer, and use the front side of the single crystal silicon wafer for the part that contacts the front electrode, such as the part used to make Finger lines and Bus lines, and the entire single crystal silicon wafer Back covered. The mask can be made by using a masking agent to print a mask or an inkjet mask. Wherein, the mask needs to protect the monocrystalline silicon wafer in the subsequent alkali texturing process, and the masking agent is preferably polyethylene wax, but the pres...

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Abstract

The invention discloses a selective wool fabricating method for a solar battery, which comprises the following steps that firstly, cover film is made on a surface of a monocrystal silicon circle, the front side of the monocrystal silicon circle used for contacting a part of a front electrode and the whole back side of the monocrystal silicon circle are covered by cover film; then the wool fabricating with alkali is carried out to enable the part not covered by cover film of the monocrystal silicon circle surface to form a pyramid pile; and finally the cover film is removed. According to the method, areas for fabricating BusBar and Finger on the front side and the back side of the monocrystal silicon sheet are protected by the cover film, and are used for pre-cleaning or wool fabricating with acid instead of being used for wool fabricating with alkali, and wool fabricating with alkali is carried out on other areas of the monocrystal silicon sheet, through the selective wool fabricating manner, a light-receiving area of a battery is not affected, a reflectivity of the pile is ensured, and a contacting resistance is reduced, therefore the photoelectric conversion efficiency of the solar battery is increased.

Description

technical field [0001] The invention relates to a method for making a solar cell, in particular to a selective texture method for a solar cell. Background technique [0002] Among all renewable energy developments, solar energy can be said to be the fastest and most reliable source of power generation. With the continuous development of solar photovoltaic technology, solar cells have been used more and more nowadays. The structure of the solar cell mainly includes a P-type semiconductor material layer and an N-type semiconductor material layer. When sunlight is irradiated, the light energy is absorbed by the semiconductor material layer, and electron-hole pairs are generated in the semiconductor material, and charges are accumulated at both ends of the interface between the P-type semiconductor material layer and the N-type semiconductor material layer to form an electric field. The P-type semiconductor material layer and the N-type semiconductor material layer are drawn o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18C30B33/10
CPCY02P70/50
Inventor 童锐石东益
Owner MOTECH SUZHOU NEW ENERGY
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