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Method and device for compressing free space in cadmium zinc telluride crystal growing crucible through double sealing sleeves

A free space, cadmium zinc telluride technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problem of reducing the free space of quartz crucibles

Inactive Publication Date: 2012-10-03
SHANGHAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The invention can significantly reduce the free space in the quartz crucible when CdZnTe single crystal grows, thereby solving the problem that more Cd components escape into the free space to form vapor due to the high partial pressure of Cd at high temperature

Method used

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  • Method and device for compressing free space in cadmium zinc telluride crystal growing crucible through double sealing sleeves

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] see figure 1 , used device among the present invention comprises high-purity quartz crucible 1, primary envelope 2, secondary envelope 3; The primary envelope 2 is a hollow high-purity quartz envelope with a section of opening, and the secondary envelope 3 is a hollow cylindrical high-purity quartz envelope, which maintains a certain degree of vacuum inside. Before and after material mixing, the secondary envelope 3 can be close to the CdZnTe material in the crucible.

[0019] The concrete processing step method of the present embodiment is as follows:

[0020] 1) will satisfy Cd 1-x Zn x Te (x=0.04~0.8) high-purity Cd, Zn, and Te raw materials with a purity of 99.99999% are put into a high-purity quartz crucible, put into two quartz envelopes in turn, and evacuated to 2.0×10 -4 Pa, use an oxyhydrogen flame to fuse the outer side of the envelope and the inner wall of the quartz crucible (the first time to seal the quartz tube).

[0021] 2) In this growth method, th...

Embodiment 2

[0024] In this embodiment, the same growth device as in the first embodiment above is used.

[0025] The growth process steps in this embodiment are completely the same as those in the first embodiment above, except that some process parameters are changed. The different process parameters are: the material temperature and holding time when the material is changed are 1135°C and 40h respectively.

[0026] The device and method for compressing the free space volume in the quartz crucible by using the double envelopes of the present invention have stable structure, simple operation and strong repeatability. The process of the present invention can effectively reduce the volume of free space in the quartz crucible during CdZnTe single crystal growth, limit the concentration of Cd vacancies in the obtained CdZnTe single crystal, and avoid the possibility of secondary charging of the material and the long crystal. Contaminated by impurities, high-quality, high-purity CdZnTe crysta...

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Abstract

The invention relates to a method and a device for compressing a free space in a cadmium zinc telluride crystal growing crucible through double sealing sleeves and belongs to the technical field of special crystal growth. The method has the main technical scheme that Cd, Zn and Te raw materials which meet Cd1-xZnxTe (x is 0.04 to 0.8) and have the purity being 99.99999 percent are charged into a quartz crucible, a secondary sealing sleeve and a primary sealing sleeve are sequentially placed into the quartz crucible, the vacuum pumping is carried out until the pressure is 2.0*10<-4>Pa, and the quartz crucible is sealed and knotted at the primary sealing sleeve part. The sealed crucible is placed into a material blending furnace, the temperature is slowly raised to 500 DEG C, after the heat insulation for a certain time, the temperature is slowly raised, and the material blending and the heat insulation are carried out after the melting point of materials is reached. The temperature is slowly lowered to the room temperature, and the material blending is completed. Then, the crucible is taken out, the crucible is subjected to secondary pipe sealing at the secondary sealing sleeve part. The primary sealing sleeve part at the tail part is cut off, and the crucible containing CdZnTe materials is placed into a crystal growth furnace for carrying out single crystal growth. The size compression on the free space during the crystal growth is realized through using the double sealing sleeves by the secondary pipe sealing method, and in the subsequent single crystal growth process, the formation of Cd vacant sites in crystals can be effectively inhibited, so the performance of the crystals is improved.

Description

technical field [0001] The invention relates to a method and a device for reducing the volume of free space in a quartz crucible during CdZnTe crystal growth by using two envelopes to seal a quartz tube twice, and belongs to the technical field of special crystal growth techniques. Background technique [0002] Cadmium Zinc Telluride Cd 1-x Zn x Te(CZT) is a semiconductor material with broad application prospects, and the preparation of its bulk single crystal has been widely concerned by people. Because CdZnTe (CZT) single crystal has a large energy gap (Eg=1.70eV), the main components Cd and Te have high atomic numbers and high resistivity (10 11 Ω cm), electron and void mobility is large (μ e =1100cm / V s, μ h =100cm / V s), wide energy detection range (10keV~6MeV), high energy resolution, and high anti-neutron and proton radiation damage threshold, so the CdZnTe detector has a large absorption coefficient and a high count High efficiency, especially it can work at room...

Claims

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Application Information

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IPC IPC(8): C30B29/46C30B35/00
Inventor 闵嘉华孙孝翔席韡刘伟伟滕嘉琪梁小燕张继军王东李辉
Owner SHANGHAI UNIV
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