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Low-capacity metal packaged silicon transient voltage suppressor and manufacturing method thereof

A technology of transient voltage suppression and metal packaging, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as high-frequency signal distortion, signal distortion, etc., to solve large junction capacitance, low junction capacitance, production low cost effect

Active Publication Date: 2014-11-12
CHINA ZHENHUA GRP YONGGUANG ELECTRONICS CO LTD STATE OWNED NO 873 FACTORY
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AI Technical Summary

Problems solved by technology

However, since the junction capacitance of conventional TVS diodes is usually around several hundred pF, even when the TVS diodes are not working in high-frequency lines, high-frequency signals are often distorted.
Therefore, there is an urgent need for a transient voltage suppression diode with low junction capacitance to solve the problem of signal distortion caused by large junction capacitance in high-frequency electronic circuits

Method used

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  • Low-capacity metal packaged silicon transient voltage suppressor and manufacturing method thereof
  • Low-capacity metal packaged silicon transient voltage suppressor and manufacturing method thereof
  • Low-capacity metal packaged silicon transient voltage suppressor and manufacturing method thereof

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Embodiment Construction

[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0026] Such as figure 1 As shown, the present invention provides a kind of manufacturing method of low-capacity metal packaging silicon transient voltage suppressor diode, and it comprises the steps:

[0027] Step 1, Diffusion: Select a suitable P-type single crystal silicon wafer and an N-type single crystal silicon wafer for rectifier diode chips according to the required breakdown voltage of the transient voltage suppression diode chip, and thin the single cryst...

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Abstract

The invention discloses a low-capacity metal packaged silicon transient voltage suppressor and a manufacturing method thereof. The low-capacity metal packaged silicon transient voltage suppressor comprises a shell, an upper lead and a lower lead which are drawn out along two ends of the shell, and a transient voltage suppressor chip, a rectifier diode chip, a plurality of solder layers and two electrodes which are arranged in the shell, wherein the shell is made of glass Kovar alloy; the transient voltage suppressor chip is connected in series with the rectifier diode chip; a plurality of solder layers are arranged on two sides of the transient voltage suppressor chip and the rectifier diode chip respectively; the transient voltage suppressor chip and the rectifier diode chip also are connected with the electrodes respectively; and the two electrodes are connected with the upper lead and the lower lead respectively. The low-capacity metal packaged silicon transient voltage suppressor has the functions of a transient voltage suppressor and a rectifier diode simultaneously, has the advantages of small size, light weight, low manufacturing cost and low junction capacity, and is particularly suitable to serve as a protective device in high frequency lines.

Description

technical field [0001] The invention relates to the field of diode processing, in particular to a structure of a transient voltage suppression diode and a manufacturing method thereof. Background technique [0002] Transient Voltage Suppressor (TVS) for short, also known as clamping diode, is a high-efficiency circuit protection device commonly used in the world. When the two poles of the TVS diode are impacted by reverse transient high energy, it can change the high impedance between its two poles to low impedance at a speed of 10 minus 12 seconds, absorbing surge power up to several thousand watts , so that the voltage between the two poles is clamped at a predetermined value, effectively protecting the precision components in the electronic circuit from being damaged by various surge pulses. [0003] Transient voltage suppression diodes have been widely used in household appliances, electronic instruments, precision equipment, automatic control systems, computer systems,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/07H01L21/50
CPCH01L24/01
Inventor 吴贵松杨秀斌孙汉炳
Owner CHINA ZHENHUA GRP YONGGUANG ELECTRONICS CO LTD STATE OWNED NO 873 FACTORY
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