Method for regulating and controlling multiferroic BiFeO3 epitaxial film band gap on SrTiO3 substrate

An epitaxial thin film, bismuth ferrite technology, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve the problems of insufficient photovoltaic conversion efficiency, low photovoltaic conversion efficiency, and restricting the practical process, etc. Achieve the effect of enhancing photovoltaic conversion efficiency, easy large-scale promotion and application, complete growth process and post-treatment process

Inactive Publication Date: 2012-10-10
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

The fly in the ointment is that BiFeO 3 Photovoltaic conversion efficiency is not high enough, which greatly restricts its practical application process
BiFeO 3 An important reason for the low photovoltaic conversion efficiency is its large band gap (-.7eV), which can only respond to the spectrum from ultraviolet to blue-green light, and this part of light only accounts for a small part of the solar spectrum.

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  • Method for regulating and controlling multiferroic BiFeO3 epitaxial film band gap on SrTiO3 substrate
  • Method for regulating and controlling multiferroic BiFeO3 epitaxial film band gap on SrTiO3 substrate
  • Method for regulating and controlling multiferroic BiFeO3 epitaxial film band gap on SrTiO3 substrate

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Embodiment Construction

[0017] see figure 1 As shown, the present invention provides a SrTiO 3 Controlled multiferroic BiFeO on substrate 3 The method for epitaxial film bandgap, comprises the steps:

[0018] 1) Choose a SrTiO 3 substrate. The chosen substrate is (001) oriented. First, the SrTiO 3 The substrate needs to be pre-annealed first, and the pre-annealing temperature is set at 850-1000°C. The pre-annealing is carried out under a flowing oxygen atmosphere at an atmospheric pressure, and the pre-annealing time is set at 1-3 hours. SrTiO 3 The substrate needs to undergo surface corrosion treatment. The corrosion solution is a buffer solution of hydrofluoric acid and ammonium fluoride. The pH of the buffer solution is set at 3.5-5.5, and the corrosion time is 20-60 seconds; SrTiO 3 The substrate needs post-annealing treatment, the post-annealing temperature is set at 850-1000°C, the post-annealing is carried out under a flowing oxygen atmosphere at an atmospheric pressure, and the post-a...

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Abstract

A method for regulating and controlling a multiferroic BiFeO3 epitaxial film band gap on a SrTiO3 substrate comprises the following steps: 1) Selecting a strontium titanate substrate; 2) Making a BiFeO3 epitaxial film rich in Bi component grow on the SrTiO3 substrate; 3) Controlling an atomic percent of the Bi and Fe in the BiFeO3 epitaxial film and regulating crystal lattice mismatching of the BiFeO3 epitaxial film and the SrTiO3 substrate; 4) Controlling thickness of the grown BiFeO3 epitaxial film rich in Bi component and regulating an in-plane bi-axis stress of the BiFeO3 epitaxial film.

Description

technical field [0001] The invention relates to the technical field of photovoltaic application of new materials, in particular to design a 3 The substrate forms a Bi-rich component BiFeO with a large lattice mismatch 3 The epitaxial film can flexibly adjust the biaxial stress in the film plane by changing the film thickness, so as to effectively control the bandgap of the multiferrobismuth ferrite epitaxial film. Background technique [0002] Multiferroic BiFeO 3 As a room temperature multiferroic material, it has attracted extensive attention. The coexistence of ferroelectricity and antiferromagnetism and the mutual coupling of the two enable this material to control its internal antiferromagnetic alignment through an electric field and change the direction of ferroelectric polarization through a magnetic field. The practical application of multi-state information storage, sensor devices, etc. provides a new way. In addition to applications in information storage, etc....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 付振尹志岗陈诺夫张兴旺吴金良张汉
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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