Dielectric ceramic material with high-temperature stability and preparation method thereof
A technology of dielectric ceramics and stability, which is applied in the field of dielectric ceramic materials with high temperature stability and its preparation. It can solve the problems that temperature stability cannot meet the requirements of multilayer ceramic capacitors, and achieve good market prospects and low prices. , the effect of excellent dielectric temperature stability
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Embodiment 1
[0032] The dielectric ceramic material with high temperature stability of the present invention is prepared as follows:
[0033] (1) The selected raw materials have a main content greater than 98.5%.
[0034] (2) Calculate the basic material formula according to the following molar ratio:
[0035] BaCO 3 :TiO 2 = 1:1, for the preparation of BaTiO 3 ;
[0036] SrCO 3 :TiO 2 = 1:1, for the preparation of SrTiO 3 ;
[0037] PbO:TiO 2 = 1:1, for the preparation of PbTiO 3 ;
[0038] Bi 2 o 3 : nTiO 2 = 1:n, for the preparation of Bi 2 o 3 · nTiO 2 (n=1~5);
[0039] CaCO 3 : ZrO 2 = 1:1, for the preparation of CaZrO 3 ;
[0040] (3) The raw materials of the basic materials calculated and weighed in step (2) will be processed according to the following process requirements:
[0041] (A) Wet ball milling: ball milling time = 12 hours.
[0042] (B) discharging and dehydration by pressure filtration.
[0043] (C) Drying: keep at 120°C for 12 hours.
[0044] (D) B...
Embodiment 2
[0073] The dielectric ceramic material with high temperature stability of the present invention is prepared as follows:
[0074] (1) The selected raw materials have a main content greater than 98.5%.
[0075] (2) Calculate the basic material formula according to the following molar ratio:
[0076] BaCO 3 :TiO 2 = 1:1, for the preparation of BaTiO 3 ;
[0077] SrCO 3 :TiO 2 = 1:1, for the preparation of SrTiO 3 ;
[0078] PbO:TiO 2 = 1:1, for the preparation of PbTiO 3 ;
[0079] Bi 2 o 3 : nTiO 2 = 1:n, for the preparation of Bi 2 o 3 · nTiO 2 (n=1~5);
[0080] CaCO 3 : ZrO 2 = 1:1, for the preparation of CaZrO 3 ;
[0081] (3) The raw materials of the basic materials calculated and weighed in step (2) will be processed according to the following process requirements:
[0082] (A) Wet ball milling: ball milling time = 12 hours.
[0083] (B) discharging and dehydration by pressure filtration.
[0084] (C) Drying: keep at 120°C for 12 hours.
[0085] (D)...
Embodiment 3
[0113] The dielectric ceramic material with high temperature stability of the present invention is prepared as follows:
[0114] (1) The selected raw materials have a main content greater than 98.5%.
[0115] (2) Calculate the basic material formula according to the following molar ratio:
[0116] BaCO 3 :TiO 2 = 1:1, for the preparation of BaTiO 3 ;
[0117] SrCO 3 : TiO 2 = 1:1, for the preparation of SrTiO 3 ;
[0118] PbO:TiO 2 = 1:1, for the preparation of PbTiO 3 ;
[0119] Bi 2 o 3 : nTiO 2 = 1:n, for the preparation of Bi 2 o 3 · nTiO 2 (n=1~5);
[0120] CaCO 3 : ZrO 2 = 1:1, for the preparation of CaZrO 3 ;
[0121] (3) The raw materials of the basic materials calculated and weighed in step (2) will be processed according to the following process requirements:
[0122] (A) Wet ball milling: ball milling time = 12 hours.
[0123] (B) discharging and dehydration by pressure filtration.
[0124] (C) Drying: keep at 120°C for 12 hours.
[0125] (D) ...
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