LED structure using ALInN quantum barrier to increase GaN-based LED inner quantum efficiency and manufacturing method thereof

Abstract

The invention relates to a LED structure using an ALInN quantum barrier to increase GaN-based LED inner quantum efficiency and a manufacturing method thereof and belongs to the optoelectronic technology field. The LED structure and the method of the invention are improved based on general an InGaN / GaN well / barrier. A material, whose band gap width is larger than the GaN barrier and which is an AlxIn1-xN material, is added in one side or two sides of each quantum well so as to increase an effective barrier height and effectively inhibit overflow of a carrier in the quantum well. Therefore, carrier injection efficiency is increased and quantum efficiency in the device is increased too.

Description

technical field [0001] The invention relates to an LED structure and a preparation method which adopts an AlInN quantum barrier to improve the internal quantum efficiency of a GaN-based LED, and belongs to the field of optoelectronic technology. Background technique [0002] III V group wide band gap direct band gap semiconductor has a series of advantages such as wide band gap, high electron mobility, high thermal conductivity, high hardness, stable chemical properties, small dielectric constant and high temperature resistance, so it is used in high brightness blue It has a wide range of practical applications and huge market prospects in electronic power devices such as color light-emitting diodes, blue semiconductor lasers, and radiation-resistant, high-frequency, high-temperature, and high-voltage devices. GaN is the basic material of semiconductor Group III nitrides. It has a hard texture and extremely stable chemical properties. It does not react with acids and alkalis...

AI Technical Summary

Problems solved by technology

The AlGaN growth temperature is 1080°C higher than the InGaN quantum well growth temperature range (650-800°C), which is not easy to operate in practice, and the position of the thin barrier layer is on both sides of the quantum well, and the function is to limit the leakage current generation, which is functionally different. Repeat, it will actually increase the voltage of the device, and increase the growth time and cost

[0006] In the Chinese patent CN101027792, the proposed LED epitaxy new structure includes a buffer layer and the upper n-AlInN layer, an active region, a p-InGaN layer, and finally a p-AlInN cladding layer grown on the p-GaN layer. Although this structure makes The crystal quality of the active area is improved, but the p-AlInN layer is outside the entire active area, and its main function is not to prevent electron leakage current, so it cannot effectively improve the internal quantum efficiency of the device at high current density

Images