Cutting method of semiconductor component containing metal back plating

Abstract

The invention provides a cutting method of a semiconductor component containing metal back plating, belonging to the field of semiconductors. The method comprises the following steps: firstly, manufacturing a plurality of semiconductor units on a semiconductor substrate; secondly, making the metal back plating layer at the back side of the semiconductor substrate; and removing metal layers corresponding to the semiconductor units by using out-of-focus type laser treatment so as to form cutting channels; carrying out the invisible cutting on the semiconductor substrate through the cutting channels so as to form deterioration layers; and finally, carrying out splintering so as to accomplish the cutting. The invention provides a cutting method through which the invisible cutting technology is applied to devices with metal back plating; the defect that a traditional cutting process easily causes the loss of the device area or the splitting of crystalline grains is overcome; and moreover, the yield of the cutting of the device is improved. The cutting method is simple in process and is applicable for industrial production.

Description

technical field [0001] The invention belongs to the field of semiconductors, in particular to a method for cutting semiconductor elements containing metal back plating. Background technique [0002] As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and fluorescent lamps. The upgrading of the industry and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes are made of III-IV compounds, such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide) and other semiconductors, and...

AI Technical Summary

Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a cutting method for semiconductor elements containing metal back plating, which is used to solve the problem that the metal back plating products in the prior art are not applicable because the laser beam cannot penetrate. The problem of cutting by stealth dicing

Images