Cleaning agent for semiconductor provided with metal wiring

A wiring and chelating agent technology, applied in the field of cleaning agents, can solve the problems that copper wiring is highly corrosive, cleaning agents cannot be applied to new microelectronic devices with fine patterns, etc., and achieve the effect of good contact resistance

Active Publication Date: 2012-11-07
ENTEGRIS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, while these cleaners have excellent ability to remove metal and organic residues, these cleaners are highly corrosive to copper wiring
Therefore, these cleaning agents cannot be applied to new microelectronic devices with fine patterns

Method used

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  • Cleaning agent for semiconductor provided with metal wiring
  • Cleaning agent for semiconductor provided with metal wiring
  • Cleaning agent for semiconductor provided with metal wiring

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0094] 0.14 parts of TEP (A-1) (trade name: AFR-AN6, purity 99.2%, manufactured by Tosoh Corporation), 0.240 parts of 25% TMAH aqueous solution (B-1) (trade name: 25% TMAH solution, having 25% purity , manufactured by Tama Chemicals Co., Ltd.), 0.002 parts of ethylenediaminetetraacetic acid (C-1) (trade name: Chelest 3A, purity 98.0%, manufactured by Chelest Corporation) were added to 300 ml of polyethylene-made in the container. Next, 99.8 parts of water (W) were added so that the total weight was 100 parts. The solution was stirred by a magnetic stirrer to obtain a first composition (D-1) for removing material from a microelectronic device comprising tungsten wiring. The resulting cleaning agent had a pH of 13.2.

Embodiment 2

[0096] The same operation as in Example 1 was carried out, except that 0.14 parts of MEA (A-2) (purity 99%, manufactured by Wako Pure Chemical Industries, Ltd.) was used instead of (A-1) in Example 1, and (B The blending amount of -1) was changed to 0.200 parts, the blending amount of (C-1) was changed to 0.004 parts, and water was added so that the total weight was 100 parts. Thereby a first composition (D-2) for removing material from a microelectronic device comprising tungsten wiring was obtained. The resulting cleaning agent had a pH of 12.5.

Embodiment 3

[0098] The same operation as in Example 1 was carried out, except that 25% TEAH aqueous solution (B-2) (trade name: 25% TEAH solution, aqueous solution with a purity of 25%, manufactured by Wako Pure Chemical Industries, Ltd.) was used instead of Example 1. (B-1). Thereby a first composition (D-3) for removing material from a microelectronic device comprising tungsten wiring was obtained. The resulting cleaning agent had a pH of 12.4.

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Abstract

A cleaning agent for a microelectronic device provided with metal wiring, which has an excellent ability to remove polishing particle residues derived from a polishing agent and an excellent ability to remove metallic residues on an insulating film, and has excellent anticorrosiveness to the metal wiring. The cleaning agent is used at a step subsequent to chemical mechanical polishing in a manufacturing process of a microelectronic device in which a metal wiring, e.g., copper or tungsten, is formed.

Description

[0001] This application claims Japanese Patent Application No. 2010-017772 filed on January 29, 2010 and entitled "Cleaning agent for semiconductor with tungsten wiring" and filed on March 26, 2010 and entitled "Cleaning agent with copper wiring Priority of Japanese Patent Application No. 2010-072824 of "Cleaning Agent for Semiconductors", both documents are hereby incorporated by reference in their entirety. technical field [0002] The present invention relates to a cleaning agent for cleaning surfaces after chemical mechanical polishing (CMP) in a production method of microelectronic devices, and in particular to a cleaning agent for attaching metal wiring (for example, tungsten or tungsten) on the surface thereof. alloy, copper or copper alloy) post-CMP cleaner for microelectronics. Background technique [0003] Market demands such as high performance and miniaturization lead to the need for more integrated semiconductor components on microelectronic devices. For exampl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D7/32C11D3/37C09K3/14H01L21/304
CPCC11D7/06C11D7/267C11D11/0047C11D3/0042C11D7/3209C11D7/265C11D7/3281H01L21/02074C11D7/3218C09K3/14C11D3/37C11D7/32H01L21/304C11D3/044C11D3/2065C11D3/2086C11D3/2096C11D3/28
Inventor 中西睦吉持浩小路祐吉
Owner ENTEGRIS INC
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