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Device and method for producing boron trifluoride-11 electronic specific gas

A kind of technology of boron trifluoride, production method, applied in directions such as boron halide compound

Inactive Publication Date: 2012-11-14
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

thus really constraining 11 BF 3 The factor for the production of electronic special gas is the abundance requirement of 99.7%, and there is no successful report in China so far

Method used

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  • Device and method for producing boron trifluoride-11 electronic specific gas
  • Device and method for producing boron trifluoride-11 electronic specific gas

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0018] Example 1: Raw material gas cylinder 1 The boron trifluoride raw material gas enters from the bottom of the synthesis device, and anisole jets down from the top of the synthesis device. At an operating temperature of 10-15°C, a complex reaction occurs to form trifluoride Boron-anisole complex. BF cracked in cracker 3 The gas enters from the bottom of the chemical exchange tower, and the gas and liquid are fully contacted in countercurrent, and the chemical exchange reaction occurs at the operating temperature of 20-25°C. heavier 11 The B isotope is enriched at the top of the column in the form of gas, and the lighter 10 The B isotope is enriched in the liquid phase complex at the bottom of the column. enriched 11 BF 3 The gas enters the synthesis device from the bottom, and re-synthesizes a liquid-phase complex with a complexing agent. enrichment 10 The liquid-phase complex of B isotope enters the cracking device and is decomposed by heat at 140-150°C. 11 BF 3 ...

example 2

[0019]Example 2: The boron trifluoride raw material gas enters from the bottom of the synthesis device, and anisole flows down from the top of the synthesis device. At an operating temperature of 15-20°C, a complexation reaction occurs to form boron trifluoride-benzyl Ether complexes. BF cracked in cracker 3 The gas enters from the bottom of the chemical exchange tower, and the gas and liquid are fully contacted in countercurrent, and the chemical exchange reaction occurs at the operating temperature of 25-30°C. heavier 11 The B isotope is enriched at the top of the column in the form of gas, and the lighter 10 The B isotope is enriched in the liquid phase complex at the bottom of the column. enriched 11 BF 3 The gas enters the synthesis device from the bottom, and re-synthesizes a liquid-phase complex with a complexing agent. enrichment 10 The liquid-phase complex of B isotope enters the cracking device and is decomposed by heat at 150-160°C. 11 BF 3 The lean gas ent...

example 3

[0020] Example 3: Boron trifluoride raw material gas (1) enters from the bottom of the synthesis device, and anisole flows down from the top of the synthesis device. At an operating temperature of 20-25 ° C, a complexation reaction occurs to form boron trifluoride - Anisole complexes. BF cracked in cracker 3 The gas enters from the bottom of the chemical exchange tower, and the gas and liquid are fully contacted in countercurrent, and the chemical exchange reaction occurs at an operating temperature of 15-20°C. heavier 11 The B isotope is enriched at the top of the column in the form of gas, and the lighter 10 The B isotope is enriched in the liquid phase complex at the bottom of the column. enriched 11 BF 3 The gas enters the synthesis device from the bottom, and re-synthesizes the liquid-phase complex with the complexing agent. enrichment 10 The liquid-phase complex of B isotope enters the cracking device and is decomposed by heat at 160-170°C. 11 BF 3 The lean gas ...

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Abstract

The invention relates to a device and a method for producing boron trifluoride-11 (11BF3) electronic specific gas, wherein boron trifluoride raw gas is fed from the bottom of a synthesizer, anisole is downwards sprayed from the top of the synthesizer, and at the operation temperature of 10-25 DEG C, complex reaction is carried out to produce a boron trifluoride-anisole complex; a BF3 gas which is cracked from a cracking device is fed from the bottom of a chemical exchange tower, the gas and the liquid counter flow to fully contact with each other, and at the operation temperature of 15-30 DEG C, the chemical exchange reaction is carried out; heavier 11B isotope is enriched at the top of the tower in a gaseous state, and lighter 10B isotope is enriched in the liquid complex in the bottom of the tower; the enriched 11BF3 gas enters the synthesizer from the bottom, and is synthesized with the anisole again to form the liquid complex; the liquid complex of the enriched 10B isotope enters a decomposer, is heated to decompose into 11BF3 lean gas at 140-170 DEG C, and enters the chemical exchange tower to be subjected to chemical exchange; and the operation is repeated until the 11B abundance of the 11BF3 gas reaches above 99.7%, and the product is recovered from an 11BF3 product outlet.

Description

technical field [0001] The present invention relates to boron trifluoride-11 ( 11 BF 3 ) The production device and method of electronic special gas, the technology is suitable for the electronics, medicine and other industries, to provide high-abundance, high-purity required 11 BF 3 production process. Background technique [0002] Boron trifluoride-11 ( 11 BF 3 ) gas has many applications in industrial production. It can be used in the electronics industry and optical fiber industry. It can be used as a raw material for preparing optical fiber preforms. It is a P-type doping source for silicon and germanium epitaxy, diffusion and ion implantation. in the semiconductor manufacturing process 11 BF 3 It is an important ion implantation gas, and it is also used as a boron dopant for silicon ion implantation. The chips produced are characterized by high integration and high density, small size and superior performance. With the rapid development of electronics and commun...

Claims

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Application Information

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IPC IPC(8): C01B35/06
Inventor 徐姣张卫江
Owner TIANJIN UNIV
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