FePt/X nano composite film for ultrahigh-density magnetic recording and preparation method thereof

A composite film and composite film technology, applied in the direction of coating with magnetic layer, record carrier manufacturing, sputtering coating, etc., can solve the problem of difficult to obtain fine particles, uniform distribution, small exchange coupling between particles, and difficult to control. Thin film microstructure and other issues, to achieve the effects of low cost, small exchange coupling between particles, and good magnetic properties

Inactive Publication Date: 2012-11-28
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is mainly to provide an ultra-high-density perpendicular magnetic recording method for the problems in the prior art that it is difficult to control the microstructure of the film, and it is difficult to obtain a nanoparticle composite film with fine particles, uniform distribution and small exchange coupling between particles. Magnetic thin film and its preparation method

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  • FePt/X nano composite film for ultrahigh-density magnetic recording and preparation method thereof

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Embodiment 1

[0027] 1. Preparation method

[0028] 1) First, clean the glass substrate in an alcohol solution using an ultrasonic cleaning device, and dry it with compressed air. Use tweezers to place the cleaned and dried glass substrate on the sample base of the sputtering chamber; wait until the vacuum at the back of the sputtering chamber reaches 1.2 ×10 -5 At Pa, a layer of orientation (200) MgO induction layer was deposited on a clean glass substrate by radio frequency magnetron sputtering technology, and its thickness was 5nm.

[0029] 2) Then continue to alternately deposit FePt (4nm) and Ag (4nm) on this induction layer to obtain [FePt(4nm) / Ag(4nm)] 5 Multi-layer film, including 5 layers of FePt thin film and Ag thin film. When sputtering the FePt layer and the Ag layer, the substrate temperature was 200° C., the argon gas pressure was 2 Pa during sputtering, and the substrate was rotated at a rate of 12 revolutions / min during the sputtering process.

[0030] 3) After the final...

Embodiment 2

[0034] 1. Preparation method

[0035] 1) First, clean the Si substrate in an alcohol solution using an ultrasonic cleaning device, and dry it with compressed air. Use tweezers to place the cleaned and dried glass substrate on the sample base of the sputtering chamber; wait until the vacuum at the back of the sputtering chamber reaches 5 ×10 -5 At Pa, a layer of MgO inductive layer was deposited on a clean glass substrate with a thickness of 10 nm by radio frequency magnetron sputtering technology.

[0036] 2) Then continue to alternately deposit FePt (2nm) and MgO (2nm) on this induction layer to obtain [FePt(2nm) / MgO(2nm)] 10 Multi-layer film, in which there are 10 layers of FePt thin film and MgO thin film; when sputtering FePt layer and MgO layer, the substrate temperature is 400°C. Argon gas pressure was 20 Pa during sputtering. During sputtering, the substrate was rotated at a rate of 20 rpm.

[0037] 3) After the final sputtering, the substrate is naturally cooled to...

Embodiment 3

[0042] 1. Preparation method

[0043] 1) First, clean the glass substrate in an alcohol solution using an ultrasonic cleaning device, and dry it with compressed air. Use tweezers to place the cleaned and dried MgO substrate on the sample base of the sputtering chamber; wait until the vacuum at the back of the sputtering chamber reaches 0.7 ×10 -5 At Pa, a layer of orientation (200) MgO induction layer was deposited on a clean glass substrate by radio frequency magnetron sputtering technology, and its thickness was 2nm.

[0044] 2) Then continue to alternately deposit FePt (5nm) and C (5nm) on this induction layer to obtain [FePt(5nm) / C(5nm)] 2 Multi-layer film, including 2 layers of FePt thin film and C thin film. When sputtering the FePt layer and the C layer, the substrate temperature was 100° C., the argon gas pressure was 10 Pa during sputtering, and the substrate was rotated at a rate of 30 rpm during the sputtering process.

[0045] 3) After the final sputtering, the ...

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Abstract

The invention relates to the field of magnetic recording materials, and particularly relates to a FePt / X nano composite film for ultrahigh-density magnetic recording, which has vertical orientation, excellent magnetic performance, and particle size smaller than 10nm, as well as a preparation method of the FePt / X nano composite film. The FePt / X nano composite film comprises a substrate, an MgO induction layer with the orientation being (200), and multiple layers of FePt films and X films alternatively deposited on the MgO induction layer, wherein X is selected from Ag, MgO, C, SiO2 or Al2O3. The preparation method is as follows: MgO is taken as the induction layer, the epitaxial growth and the vertical orientation of a FePt magnetic layer are realized; and by the annealing, the FePt / X films are induced to complete the sequencing of an L10FePt phase to form the nano composite film of the particle structure. The FePt / X nano composite film has the advantages that the preparation method is simple, the cost is low, the product performance is good, and the like, and is suitable for the production of ultrahigh-density vertical magnetic recording mediums.

Description

technical field [0001] The invention relates to the field of magnetic recording materials, in particular to a FePt / X nanocomposite thin film with vertical orientation, excellent magnetic performance, particle size less than 10 nanometers and small exchange coupling between particles and a preparation method thereof. Background technique [0002] In recent years, the rapid increase of magnetic recording density has brought new challenges to traditional magnetic recording technology. Generally, the improvement of recording density is mainly achieved by continuously reducing the size of magnetic grains in the recording film. However, a reduction in the average grain size leads to a magnetization reversal thermal stability factor (K U V / k B T:K U is the magnetic anisotropy; V is the volume of magnetic particles; k B Boltzmann's constant; T is the temperature). The smaller the thermal stability factor of magnetization reversal, the magnetization of magnetic particles will be...

Claims

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Application Information

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IPC IPC(8): G11B5/84G11B5/851
Inventor 陆伟何晨冲陈哲严彪
Owner TONGJI UNIV
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