Unlock instant, AI-driven research and patent intelligence for your innovation.

Titanium aluminium nitride dielectric layer low-radiation film and preparation process thereof

An aluminum-titanium nitride medium and technology for preparation process, which are applied in the directions of layered products, chemical instruments and methods, synthetic resin layered products, etc., can solve the problems of increased production cost, complex production process, low production efficiency, etc. Low cost, simple preparation process, and improved quality

Inactive Publication Date: 2012-12-19
CHONGQING UNIV
View PDF6 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the existing low-e film often has the following disadvantages: (1) it is not suitable for use or processing at high temperature; (2) there are many layers of film and the structure is complex; (3) the production process is complicated and the production efficiency is low; (4) Use of precious metals increases production costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Titanium aluminium nitride dielectric layer low-radiation film and preparation process thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] A low-emissivity thin film of aluminum nitride dielectric layer and its preparation process, the specific steps are as follows:

[0038] (1) Substrate pretreatment

[0039] The glass substrate passes through dilute hydrochloric acid with a pH value of 5, deionized water, sodium hydroxide solution with a pH value of 9, deionized water, and alcohol in order to clean the glass substrate and remove dirt such as oil stains on the surface, and then Dry in an oven at 60°C for later use.

[0040] (2) Coating

[0041] 1) prepare

[0042] Make preparations for the coating work of the magnetron sputtering instrument.

[0043] 2) Put the substrate and target

[0044] ① Put in the target

[0045] Put the titanium metal target with a purity of 99.99%, the aluminum metal target with a purity of 99.99%, and the silver metal target with a purity of 99.99% into the radio frequency end target position in the sputtering chamber of the coating machine, which is an AC rotating three tar...

Embodiment 2

[0057] A low-emissivity thin film of an aluminum nitride dielectric layer and a preparation process thereof, the same as in Example 1, wherein:

[0058] In step (1), dilute hydrochloric acid with a pH value of 6 and sodium hydroxide solution with a pH value of 8 are then dried in an oven at 70° C. for later use.

[0059] In step (2)-2)-②, the distance between the target position and the sample is 6cm.

[0060] In step (2)-5), the reaction nitrogen flow rate is controlled at 40sccm, the titanium target power is 70W, and the aluminum target power is 120W to prepare the inner aluminum titanium nitride film, the coating time is 60min, and the film thickness is 30nm. The silver target power is 120W, and the silver film is prepared, the coating time is 20s, and the film thickness is 11nm. The conditions for preparing the inner layer of aluminum titanium nitride thin film were used to prepare the outer layer of aluminum titanium nitride thin film, the coating time was 80 min, and th...

Embodiment 3

[0062] A low-emissivity thin film of an aluminum nitride dielectric layer and a preparation process thereof, the same as in Example 1, wherein:

[0063] In step (1), dilute hydrochloric acid with a pH value of 4 and sodium hydroxide solution with a pH value of 10 are then dried in an oven at 50° C. for later use.

[0064] In step (2)-2)-②, the distance between the target position and the sample is 12cm.

[0065] In step (2)-5), the reaction nitrogen flow rate is controlled at 25 sccm, the titanium target power is 30W, and the aluminum target power is 80W to prepare the inner aluminum titanium nitride film, the coating time is 100min, and the film thickness is 25nm. The silver target power is 80W, and the silver film is prepared, the coating time is 40s, and the film thickness is 13nm. The conditions for preparing the inner layer of aluminum titanium nitride thin film were used to prepare the outer layer of aluminum titanium nitride thin film, the coating time was 120min, and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a titanium aluminium nitride dielectric layer low-radiation film and a preparation process thereof, belonging to the technical field of functional films. According to the invention, the titanium aluminium nitride dielectric layer low-radiation film is prepared by adopting a magnetron sputtering method, and the film structure of the titanium aluminium nitride dielectric layer low-radiation film sequentially comprises a titanium aluminium nitride dielectric layer inner layer, a silver layer and a titanium aluminium nitride dielectric layer outer layer from a substrate to upper part. The titanium aluminium nitride dielectric layer low-radiation film disclosed by the invention is high in visible light transmittance, low in infrared radiance and long in service life. The preparation process of the titanium aluminium nitride dielectric layer low-radiation film is simple, easy to operate, low in production cost and good in industrial application prospect. The titanium aluminium nitride dielectric layer low-radiation film can be widely applied to the industries such as energy-saving building glass and automobile glass, reduces glass heat waste and reduces energy consumption for regulating and controlling room temperature.

Description

technical field [0001] The invention belongs to the technical field of functional thin films, in particular to an aluminum nitride titanium dielectric layer low-radiation thin film and a preparation process thereof. Background technique [0002] Low-emissivity glass refers to the coated glass coated with a layer of low-emissivity film on the surface. The low-emission film generally uses silver as the infrared reflection layer, which can well prevent the penetration of heat radiation. In recent years, it has been widely used in buildings, automobiles, etc. field, played a good role in energy saving. [0003] Commonly used low-emissivity films are generally prepared by magnetron sputtering. Since the silver layer will cause low light transmittance, high light reflection, and is very easy to be corroded and mechanically worn, it is necessary to plate a dielectric film on the upper and lower sides of the silver layer. Its function is to increase light transmittance and reduce l...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B32B17/06B32B27/06
Inventor 黄佳木尹军香承杰吴萌柳红东刘园园
Owner CHONGQING UNIV