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Preparation method of metal hard mask layer and semiconductor manufacturing method

A metal hard mask layer and hard mask technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems affecting etching and other processes, and the uniformity of film resistivity.

Active Publication Date: 2012-12-19
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Although the adjustment of the deposition parameters of the titanium nitride film reduces the stress of the film, it affects the resistivity uniformity of the film, which in turn affects its subsequent etching and other processes.

Method used

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  • Preparation method of metal hard mask layer and semiconductor manufacturing method
  • Preparation method of metal hard mask layer and semiconductor manufacturing method
  • Preparation method of metal hard mask layer and semiconductor manufacturing method

Examples

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no. 1 example

[0032] Different from the prior art mentioned above, such as Figure 4 As shown, in the method for preparing the metal hard mask layer in the embodiment of the present invention, after the metal hard mask layer 5 is formed on the substrate, the metal hard mask layer 5 is irradiated with ultraviolet light. Thereafter, for the Cu metal interconnection process according to the embodiment of the present invention, subsequent steps may be performed as in the prior art.

[0033] Therefore, compared with the original method, the weaker chemical bonds inside the metal hard mask layer film will be removed after ultraviolet light irradiation treatment, which improves the quality of the metal hard mask layer film; the metal hard mask layer film shrinks , so that the metal hard mask layer thin film shrinks to produce stress tending to stretch, so as to offset the larger compressive stress in part of the metal hard mask layer thin film.

[0034] Using this method can reduce the stress of ...

no. 2 example

[0037] The copper interconnection forming method according to the embodiment of the present invention will be specifically described below.

[0038] Specifically, the copper interconnection forming method according to the embodiment of the present invention may include the following steps:

[0039] First, a barrier film is deposited on a substrate, for example, the substrate is a porous dielectric film substrate.

[0040] Thereafter, a dielectric film is deposited on the barrier film.

[0041] Subsequently, a metal hard mask layer is deposited on the dielectric film, wherein, preferably, the metal hard mask layer is a titanium nitride film layer, and further preferably, the nitrogen used as the metal hard mask layer The preparation method of titanium oxide film is usually PVD (Physical Vapor Deposition, Physical Vapor Deposition), but MOCVD (Metal Organic Chemical Vapor Deposition, Metal Organic Chemical Vapor Deposition) and ALD (Atomic Layer Deposition) can be used as alter...

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Abstract

The invention provides a preparation method of a metal hard mask layer and a semiconductor manufacturing method. According to the invention, a copper mutual connection forming method comprises the steps of providing a substrate, depositing a baffle membrane on the substrate, depositing a medium membrane on the baffle membrane, depositing a metal hard mask layer on the medium membrane, carrying out ultraviolet radiation processing on the metal hard mask layer, depositing a hard mask covering layer on the metal hard mask layer, executing a single Damascus etching process and / or double Damascus etching processes so as to etch the medium membrane, the hard mask and the hard mask covering layer, thereby exposing at least one part of holes of a porous medium membrane. According to the invention, through the ultraviolet radiation processing, weaker chemical bonds inside the metal hard mask layer membrane are eliminated, then the quality of the metal hard mask layer membrane is improved; the metal hard mask layer membrane is shrunk to generate a stress having the trend of tension, so that the large pressure stress in the metal hard mask layer membrane can be counteracted partially.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, more specifically, the invention relates to a method for preparing a metal hard mask layer, a method for forming copper interconnections and a semiconductor manufacturing method using the method for preparing the metal hard mask layer. Background technique [0002] In 0.13um and more advanced back-end processes, copper interconnects are widely replaced by aluminum interconnects due to lower resistivity and better anti-electromigration performance. The completion of the copper interconnection process can be realized by the method of metal hard mask layer. The use of this process can reduce the damage caused by the low dielectric constant interlayer dielectric during the dry process, reduce the amount of photoresist, and the film is a sacrificial layer and will not remain in the final product, thus This process is widely used in copper interconnection below 65nm. [0003] PVD (Physical ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
Inventor 徐强
Owner SHANGHAI HUALI MICROELECTRONICS CORP