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Heater for MOCVD (metal-organic chemical vapor deposition) equipment

A heater and equipment technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of low heating precision control, poor temperature field uniformity, easy oxidation and deformation, and achieve automatic and reasonable control temperature mode, meet the strict requirements, and ensure the effect of assembly accuracy

Inactive Publication Date: 2013-01-02
S C NEW ENERGY TECH CORP +1
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AI Technical Summary

Problems solved by technology

[0004] 1. The high temperature creep resistance of the heating base is poor
The heating base has a long working time and high temperature, is easy to oxidize and deform, and cannot be used in an oxidizing atmosphere
[0005] 2. Poor uniformity of temperature field
For production-type MOCVD, it is basically a multi-chip machine with more than 6 pieces, and the area to be heated is larger. If the temperature gradient is large, the quality of epitaxial wafer growth will be greatly affected.
[0006] 3. Low heating precision control and unreasonable temperature control method
[0007] 4. The cost of heating furnace material is high

Method used

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  • Heater for MOCVD (metal-organic chemical vapor deposition) equipment

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Embodiment Construction

[0018] The invention will be described in detail below with reference to the drawings and embodiments.

[0019] In view of the heating temperature requirements of the MOCVD equipment, the present invention mainly designs the heater from three aspects: the selection of the heating furnace body material, the design of the heating body structure, and the design of the heating temperature controller.

[0020] Such as figure 1 As shown, the heater for MOCVD equipment proposed by the present invention includes a disc-shaped furnace body, wherein the furnace body is divided into three areas: an inner ring, a middle ring, and an outer ring. These three areas are respectively provided with an inner ring heater 21 , Middle ring heating body 22 and outer ring heating body 23, each group of heating bodies is controlled by a separate heating power controller.

[0021] Such as figure 1 As shown, the inner ring heating body 21, the middle ring heating body 22 and the outer ring heating body 23 ar...

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Abstract

The invention discloses a heater for MOCVD (metal-organic chemical vapor deposition) equipment, which comprises a disklike furnace body and heating bodies arranged on the furnace body. The invention is characterized in that the furnace body is divided into an inner ring area, a middle ring area and an outer ring area which are respectively provided with three sets of heating bodies; and each set of heating bodies is controlled by an independent heating power supply controller. The invention can evenly control the temperature field of the heater, and the material cost of the heating furnace body is low.

Description

Technical field [0001] The present invention relates to a technology for preparing semiconductor thin films, in particular to a heater used in MOCVD equipment. Background technique [0002] Metal-organic Chemical Vapor DePosition (MOCVD) is a key technology for preparing compound semiconductor films. MOCVD equipment mainly includes several parts such as gas circuit system, heating system, reaction chamber and detection and control system. Among them, the heating system mainly heats the substrate where the reaction occurs, and provides the temperature required for the reaction. It must meet the requirements of uniform heating, fast heating and cooling speed, and short temperature stabilization time. [0003] The existing heaters have the following shortcomings and defects: [0004] 1. The high temperature creep resistance of the heating base is poor. The heating base has a long working time and high temperature, which is easy to oxidize and deform, and cannot be used in an oxid...

Claims

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Application Information

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IPC IPC(8): C23C16/46C23C16/18
Inventor 肖四哲邓金生杨宝力
Owner S C NEW ENERGY TECH CORP
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