Transient voltage suppressor and application thereof

Abstract

The invention discloses a transient voltage suppressor, which comprises a P substrate embedded with an N well, a first N+ active injection area and a first P+ active injection area. A second N+ active injection area and a second P+ active injection area are embedded into the N well. A third N+ active injection area is embedded at a junction of the P substrate and the N well. The P substrate between the first N+ active injection area and the third N+ active injection area is provided with a grid region. The second N+ active injection area is led out through a metal line to be used as an anode of the transient voltage suppressor, and the grid region is connected with the first N+ active injection area and the first P+ active injection area and led out through the metal line to be used as a cathode of the transient voltage suppressor. The transient voltage suppressor provided by the invention has relatively low trigger voltage and relatively high maintaining voltage, is small in hysteresis and strong in ESD (Electro-Static Discharge) conductive capacity, and has stronger ESD protective capacity.

Description

technical field [0001] The invention belongs to the technical field of electrostatic protection of off-chip integrated circuits, and in particular relates to a transient voltage suppressor and its application. Background technique [0002] With the development of the semiconductor integrated circuit industry, the ESD (Electrostatic Discharge, electrostatic discharge) problem has always been a troublesome problem in this field. Doing a good job of electrostatic protection for integrated circuits is extremely important to the reliability of an electronic system. Nowadays, electronic devices tend to be miniaturized, high-density, and multi-functional. Especially, applications such as fashion consumer electronics and portable products that have strict requirements on the motherboard area are easily affected by electrostatic discharge. Static electricity exists all the time and everywhere. In the 1960s, with the emergence of MOS devices that are very sensitive to static electric...

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Problems solved by technology

Among them, the trigger voltage of the diode is too low, and the application range is small; the protection ability of the SCR is very good, but its maintenance voltage is low, the trigger voltage is high, and its characteristic curve has a large hysteresis phenomenon, so it is difficult to be directly used for ESD. protection

[0005] GGMOS has a lower trigger voltage and higher sustain voltage, but its protection ability is poor; its structure and equivalent circuit are shown in Figure 2: the GGMOS device includes a P substrate 101, two N+ active injection regions 102~ 103, a P+ active injection region 104, a gate 105, a field oxygen isolation 106

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