Chip of MEMS (micro-electromechanical system) thermopile infrared detector and method for manufacturing inner chip in chip of MEMS thermopile infrared detector and chip of MEMS thermopile infrared detector

Abstract

The invention relates to a chip of an MEMS (micro-electro-mechanical system) thermopile infrared detector. The chip comprises an inner chip and an infrared filter window on the inner chip, wherein the inner chip comprises a substrate on which a front face, a back face and an air cavity formed by sinking from the front face are arranged; the air cavity does not penetrate through the back face of the substrate; the front face is provided with a support part and an infrared heat absorption layer; the infrared heat absorption layer is arranged in the support part and the air cavity, and the thickness of the infrared heat absorption layer is greater than or equal to the support part and less than the air cavity; a thermopile is arranged on the support part, and the substrate and the infrared heat absorption layer are formed as a cold end and a hot end of the thermopile respectively; the thermopile comprises a first conducting layer and a second conducting layer which are made of different conducting materials; the first conducting layer and the second conducting layer are led out by a first electrode at the tail end of the first conducting layer and a second electrode at the tail end of the second conducting layer; tops of the first electrode and the second electrode are exposed; and the thermopile is made of a material compatible with a CMOS (complementary metal oxide semiconductor) technique. A manufacturing method disclosed by the invention is higher in manufacturability and simple in process.

Description

technical field [0001] The invention relates to the field of MEMS (micro-electromechanical systems) devices, in particular to a MEMS thermopile infrared detector chip, a method for manufacturing an inner chip used in the MEMS thermopile infrared detector chip and the chip itself by using a microfabrication process. Background technique [0002] In recent years, thermopile infrared detectors have been widely used in fields that require temperature and radiation measurement, such as in national defense, medical treatment, home appliances, industrial control, automobiles, public safety, etc. It works by exploiting the Seebeck effect, the phenomenon of hot spots where temperature differences between two dissimilar electrical conductors or semiconductors cause a voltage difference between the two materials, to detect infrared radiation. Like other electronic components, with the popularity of applications and the increase in demand, the development trend of thermopile infrared de...

AI Technical Summary

Problems solved by technology

Porous black metal has the advantages of high infrared absorption rate, but also has the disadvantages of poor adhesion and poor process compatibility.

Although the film stacking method has good process compatibility, it requires high process control

[0006] In addition to the above-mentioned thermopile manufacturing methods and heat absorbing layer materials, the packaging of MEMS thermopile infrared detectors is also a big problem

Since the processed MEMS thermopile infrared detector contains moving mechanical parts, if it is not well protected in the subsequent packaging process, the MEMS device is extremely vulnerable to damage

Traditional semiconductor packaging equipment cannot be directly used for the packaging of MEMS devices, and must be specially modified to meet the special packaging requirements of MEMS devices

It is precisely because of the particularity of MEMS packaging and is not well compatible with existing semiconductor packaging and testing equipment that the packaging and testing costs of MEMS devices are usually much higher than their manufacturing costs, which has become an important reason for the rapid industrialization of MEMS devices. reason

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