TCO (transparent conducting oxide) conducting DBR (distributed Bragg reflector) vertical blue-light LED (light-emitting diode) chip and manufacturing method thereof

Abstract

The invention provides a TCO (transparent conducting oxide) conducting DBR (distributed Bragg reflector) vertical blue-light LED (light-emitting diode) chip and a manufacturing method thereof. The method comprises the following steps: form a light-emitting epitaxial layer on a sapphire substrate; coating a TCO conducting DBR layer, which is composed of a first-type N-type TCO film and a second-type N-type TCO film and / or nth-type N-type TCO film alternately, on the upper surface of the light-emitting epitaxial layer by vaporization, thereby forming ohmic contact with the upper surface of the light-emitting epitaxial layer; bonding the conducting substrate onto the TCO conducting DBR layer to form a P electrode by a wafer bonding technique; peeling the sapphire substrate by a laser peeling technique; and finally, preparing an N electrode on the lower surface of the light-emitting epitaxial layer. The vertical blue-light LED solves the problems of difficulty in forming ohmic contact with P-GaN, weak reflector adhesiveness, lower reflection factor of the reflector at high temperature, overhigh preparation temperature of the conducting DBR, overhigh voltage of the blue-light LED chip using the conducting DBR as the P electrode, and the like in the vertical LED chip electrode material in the prior art.

Description

technical field [0001] The invention relates to a blue light LED chip and a manufacturing method thereof, in particular to a TCO type conductive DBR vertical blue light LED chip and a manufacturing method thereof. Background technique [0002] At present, common blue LED chips are divided into two types, namely, blue LED chips with a lateral structure (Lateral) and blue LED chips with a vertical structure (Vertical), wherein the P and N electrodes of the blue LED chips with a lateral structure are on the same side , the P and N electrodes on the same side will inevitably need to etch away part of the quantum wells to prepare the N region, thus wasting a considerable part of the light-emitting area, and the same side of the P and N electrodes has many disadvantages such as uneven current distribution and poor heat dissipation, while the current The uneven distribution will affect the voltage and brightness of the chip. Poor heat dissipation will cause the junction temperature...

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Problems solved by technology

[0009] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a TCO-type conductive DBR vertical blue LED chip and its manufacturing method, to solve the above-mentioned vertical LED chips in the prior art that are difficult to form with P-GaN Problems such as ohmic contact, poor adhesion of mirrors, decreased reflectivity of mirrors at high temperatures, too high preparation temperature of conductive DBR, and too high voltage of blue LED chip using conductive DBR as P electrode

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