Ultra wide band low noise amplifier circuit
A low-noise amplifier and ultra-broadband technology, which is applied to amplifiers with field effect devices, amplifiers with only semiconductor devices, improved amplifiers to reduce noise effects, etc., can solve the problem of large layout area and common gate structure weakening the effect of noise cancellation technology , matching characteristics and noise characteristics are difficult to achieve both, and achieve the effect of low noise figure
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[0017] like figure 1 As shown, the ultra-wideband low-noise amplifier circuit provided by the embodiment of the present invention includes a first field effect transistor Q 1 , the second FET Q 2 , the first resistor R 1 , the second resistor R 2 , the third resistor R 3 , the first inductance L 1 , the second capacitor C 2 and to ground the first capacitor C 1 .
[0018] The first capacitance C 1 and the first inductance L 1 Connect with a signal input port (Vin). Specifically: the input port (Vin) is connected to the first capacitor C connected in parallel to the ground 1 At the same time, the first inductance L is connected in series 1 , the first inductance L 1 The other end is connected to the first field effect transistor Q 1 the grid. Connect the first capacitor C in parallel 1 and in series with the first inductor L 1 Connect the input port (Vin) and the first FET Q 1 gate, and the first FET Q 1 The parasitic capacitance between the gate and source wo...
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