Ultra wide band low noise amplifier circuit

A low-noise amplifier and ultra-broadband technology, which is applied to amplifiers with field effect devices, amplifiers with only semiconductor devices, improved amplifiers to reduce noise effects, etc., can solve the problem of large layout area and common gate structure weakening the effect of noise cancellation technology , matching characteristics and noise characteristics are difficult to achieve both, and achieve the effect of low noise figure

Inactive Publication Date: 2013-02-20
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
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AI Technical Summary

Problems solved by technology

However, due to the large power consumption of the multi-tube cascaded amplifier, the distributed amplifier has a large area; the source degenerate amplifier based on the broadband filter network is difficult to obtain a lower noise figure due to the additional noise introduced by the loss of the on-chip inductance and capacitance in the filter network, and because the on-chip Multiple spiral inductors are integrated, and the layout area is large; the feedback resistor in the resistor parallel feedback amplifier to obtain matching characteristics will sacrifice amplifier noise, and it is difficult to have both matching characteristics and noise characteristics; it is difficult for a common-gate amplifier based on broadband noise cancellation technology to provide High gain, and the inherent high noise characteristics of the common gate structure will weaken the effect of noise cancellation techniques

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Embodiment Construction

[0017] like figure 1 As shown, the ultra-wideband low-noise amplifier circuit provided by the embodiment of the present invention includes a first field effect transistor Q 1 , the second FET Q 2 , the first resistor R 1 , the second resistor R 2 , the third resistor R 3 , the first inductance L 1 , the second capacitor C 2 and to ground the first capacitor C 1 .

[0018] The first capacitance C 1 and the first inductance L 1 Connect with a signal input port (Vin). Specifically: the input port (Vin) is connected to the first capacitor C connected in parallel to the ground 1 At the same time, the first inductance L is connected in series 1 , the first inductance L 1 The other end is connected to the first field effect transistor Q 1 the grid. Connect the first capacitor C in parallel 1 and in series with the first inductor L 1 Connect the input port (Vin) and the first FET Q 1 gate, and the first FET Q 1 The parasitic capacitance between the gate and source wo...

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Abstract

The invention belongs to the technical field of radio frequency integrated circuits and particularly relates to an ultra wide band low noise amplifier circuit. The ultra wide band low noise amplifier circuit comprises a first field-effect tube, a second field-effect tube, a first resistor, a second resistor, a third resistor, a first inductor, a first capacitor and a second capacitor, and the first capacitor and the second capacitor are grounded. The ultra wide band low noise amplifier circuit can provide low noise coefficient, high and flat gain and good input and output matching in ultra-wide band.

Description

technical field [0001] The invention belongs to the technical field of radio frequency integrated circuit design, and relates to an ultra-wideband low-noise amplifier circuit applied to an ultra-wideband communication system. Background technique [0002] In recent years, there has been an increasing demand for multi-band multi-mode radios that can simultaneously cover multiple communication standards. Various communication standards, such as digital TV broadcasting (DVB), mobile phone wireless network, GPS global positioning system, satellite communication network and other functional integration, put forward multi-band and multi-mode compatibility requirements for radio systems. It has become a research hotspot to develop integrated wideband radio receivers that can meet the requirements of various communication standards and cover frequencies from 100 MHz low frequency to 6 GHz (software defined radio) or even 10 GHz (ultra wideband communication UWB). [0003] As the co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/26H03F3/16
Inventor 孙征宇杨洪文阎跃鹏张立军
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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