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Monocrystal silicon wafer polishing process capable of obtaining high polishing rate

A polishing rate, silicon wafer technology, applied in surface polishing machine tools, grinding/polishing equipment, manufacturing tools, etc., can solve the problem that the removal rate is high, the removal rate cannot be too high, and the removal rate does not have much room for improvement, etc. solve problems, achieve the effect of meeting demand and reducing fixed costs

Active Publication Date: 2013-03-13
ZHONGHUAN ADVANCED SEMICON MATERIALS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Rough polishing is mainly used to remove the damaged layer produced by the previous process, and its removal rate is the largest; the removal rate of medium polishing and fine polishing is much lower than that of rough polishing, while medium polishing and fine polishing are mainly used to repair the stress damage of rough polishing, remove The rate cannot be too high, so there is not much room for improvement in the removal rate of medium polishing and fine polishing

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0014] Example: 6 inches (diameter 150mm) Czochralski silicification corrosion sheet, resistivity: 15-25Ω.cm, thickness: 625μm, quantity: 1024 pieces.

[0015] Processing equipment: There are wax placement machines and single-sided polishing machines.

[0016] Auxiliary materials: polishing wax, ceramic disc, rough polishing liquid, rough polishing cloth.

[0017] The processing process is as follows:

[0018] ① Send the monocrystalline silicon wafer to the loading table of the placement machine, the placement machine automatically sprays wax on the monocrystalline silicon wafer, and attaches it to the ceramic plate, and automatically transfers it to the polishing machine after the placement is completed Ready to polish.

[0019] ②Polishing by the polishing machine, followed by rough polishing, medium polishing, and fine polishing in three stages.

[0020] In the rough polishing stage, the American DuPont SR330 rough polishing liquid is used, and the dilution ratio of the r...

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PUM

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Abstract

The invention relates to a monocrystal silicon wafer polishing process capable of obtaining a high polishing rate. In a coarse polishing process, an American Dupont SR330 coarse polishing solution is adopted, and diluted by pure water according to the ratio of 1:20 to 1:40; the flow is 23.5-24.5 L / min; a Rohm and Haas SUBA600 polishing pad is adopted; and the coarse polishing process comprises the following three steps: 1, using a coarse polishing solution to polish for 10 s, the rotating speed of a big disk being 23-27 rpm, the rotating speed of a central guide wheel being 48-52 rpm, and the pressure being 47-53 kPa; 2, using a coarse polishing solution to polish for 7-13 min, the rotating speed of the big disk being 38-42 rpm, the rotating speed of the central guide wheel being 78-82 rpm, and the pressure being 100-200 kPa; and 3, using pure water to polish for 40 s, the rotating speed of the big disk being 23+ / -27 rpm, the rotating speed of the central guide wheel being 48-52 rpm, and the pressure being 47-53 kPa. The polished section processed by the process has the removal rate up to 1.83-2.09 micron / min, which is far higher than the average level of 1 micron / min in the industry, and meanwhile, and has the pass percent up to more than 90% stably. The improvement of the productivity of the polished section can reduce the fixed cost, thereby meeting the requirements of domestic and foreign markets.

Description

technical field [0001] The invention relates to a wax polishing technology for a semiconductor single crystal silicon wafer polishing sheet, in particular to a single crystal silicon wafer polishing process capable of obtaining a high polishing rate. Background technique [0002] With the take-off of China's economy and the development of domestic IC industry, there is a strong demand for polished monocrystalline silicon wafers, which are substrate materials for semiconductor devices. Polishing capacity is a key indicator for the production of single crystal silicon wafer polished wafers. Increasing polishing capacity can dilute fixed costs, reduce production costs, and help meet the growing market demand. [0003] Compared with wax-free polishing, wax polishing has become the mainstream technology of international polishing sheet manufacturers because of its advantages in polishing surface flatness. This type of polishing machine generally has a faster patch action than po...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B29/02
Inventor 王丹垢建秋刘建伟孙晨光武卫
Owner ZHONGHUAN ADVANCED SEMICON MATERIALS CO LTD
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