The invention relates to a monocrystal silicon wafer polishing process capable of obtaining a high polishing rate. In a coarse polishing process, an American Dupont SR330 coarse polishing solution is adopted, and diluted by pure water according to the ratio of 1:20 to 1:40; the flow is 23.5-24.5 L / min; a Rohm and Haas SUBA600 polishing pad is adopted; and the coarse polishing process comprises the following three steps: 1, using a coarse polishing solution to polish for 10 s, the rotating speed of a big disk being 23-27 rpm, the rotating speed of a central guide wheel being 48-52 rpm, and the pressure being 47-53 kPa; 2, using a coarse polishing solution to polish for 7-13 min, the rotating speed of the big disk being 38-42 rpm, the rotating speed of the central guide wheel being 78-82 rpm, and the pressure being 100-200 kPa; and 3, using pure water to polish for 40 s, the rotating speed of the big disk being 23+ / -27 rpm, the rotating speed of the central guide wheel being 48-52 rpm, and the pressure being 47-53 kPa. The polished section processed by the process has the removal rate up to 1.83-2.09 micron / min, which is far higher than the average level of 1 micron / min in the industry, and meanwhile, and has the pass percent up to more than 90% stably. The improvement of the productivity of the polished section can reduce the fixed cost, thereby meeting the requirements of domestic and foreign markets.