Crystal growth method of polycrystalline silicon ingot
A technology for crystal growth and polycrystalline silicon ingots, which is applied in crystal growth, polycrystalline material growth, single crystal growth, etc., can solve the problems of large changes in the growth rate of polycrystalline silicon ingots, affecting the efficiency of solar cells, and the decline in the quality of polycrystalline silicon ingots. The effect of improving the overall quality, reducing the defect density, and increasing the overall ratio
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Embodiment 1
[0026] The polycrystalline ingot furnace is used to produce polycrystalline silicon ingots by the method of directional solidification growth, including: heating stage, melting stage, growth stage, annealing stage and cooling stage. The process formula of the growth stage is shown in Table 1, wherein, at the end of the G6 stage, the top is completed; at the end of the G7 stage, the long horn is completed.
[0027] Table 1
[0028]
Embodiment 2
[0030] The polycrystalline ingot furnace is used to produce polycrystalline silicon ingots by the method of directional solidification growth, including: heating stage, melting stage, growth stage, annealing stage and cooling stage. The process formula of the growth stage is shown in Table 2, wherein, at the end of the G6 stage, the top is completed; at the end of the G7 stage, the long horn is completed.
[0031] Table 2
[0032]
Embodiment 3
[0034] The polycrystalline ingot furnace is used to produce polycrystalline silicon ingots by the method of directional solidification growth, including: heating stage, melting stage, growth stage, annealing stage and cooling stage. The process formula of the growth stage is shown in Table 3, wherein, at the end of the G6 stage, the top is completed; at the end of the G7 stage, the long horn is completed.
[0035] table 3
[0036]
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