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Transistor and manufacturing method thereof

A manufacturing method, transistor technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of failure to enter the THz gap, loss, etc.

Inactive Publication Date: 2013-03-27
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It is worth noting that in the DOTFIVE project, the circuit design of a complete frequency multiplier chain for 0.325 THz represents the current state of the art, but this is not only a very lossy approach, it has not yet entered the THz gap

Method used

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  • Transistor and manufacturing method thereof
  • Transistor and manufacturing method thereof
  • Transistor and manufacturing method thereof

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Embodiment Construction

[0030] According to an embodiment of the present invention, a novel "inverted" silicon-germanium heterojunction bipolar transistor (SiGeHBT) device capable of penetrating into the terahertz gap (THzgap) frequency band from the microwave direction is provided. By adopting revolutionary thin-film technology innovations related to materials, process technologies and device structures, such as NiSi grown on Si using solid-state reaction (SSR) epitaxy 2 and in NiSi 2 The atomic layer epitaxy method is used to grow Si etc. to prepare SiGeHBT. The HBT device can work in the terahertz gap frequency band.

[0031] figure 1 is a schematic cross-sectional view of an inverted HBT 100 according to one embodiment of the present invention. Such as figure 1 As shown, the inverted HBT 100 includes an epitaxial layer 110 on a semiconductor (eg, silicon) substrate 101, an emitter 120 on the epitaxial layer 110, a base 130 on the emitter 120, and a collector 140 . Therefore, the order of the...

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Abstract

A transistor is in an inverted heterojunction structure, wherein an emitting electrode layer is formed before forming of a base layer and a collector layer. Good thermal budgets are provided for the critical base region morphology and the doping distribution control, so that a high cut-off frequency (fT) can be obtained; and the contact area of a collector region and a base region is minimized, so that the stray capacitance can be greatly reduced, and the highest oscillation frequency (fmax) can be increased. Thus, frequency characteristics of the transistor can be greatly improved. An atomic layer epitaxy (ALE) process can be used for forming the emitting electrode layer on an epitaxial monocrystalline metal silicide which is formed in advance, the base layer is formed on the emitting electrode layer, and the collector layer is formed on the base layer, so that the inverted heterojunction structure can be obtained.

Description

technical field [0001] The invention relates to electronic device technology, in particular to a transistor and a manufacturing method thereof. Background technique [0002] At 0.5 to 6 terahertz (THz, ie 10 12 Hertz) frequency system, imaging and spectroscopy systems have important applications in the fields of security, health, remote sensing and basic science. Terahertz waves have strong attenuation strength in water, but have a greater penetration depth to biological tissues without causing damage to biological tissues. They are therefore particularly suitable for security applications involving low-risk imaging through opaque objects, such as through clothing, teeth, paper, plastic and ceramic materials. Terahertz waves are also ideal for health applications, such as early diagnosis of skin cancer. Consequently, many socially based applications involving security, medicine, bioanalysis, remote sensing for environmental monitoring, and natural disaster mitigation have...

Claims

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Application Information

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IPC IPC(8): H01L29/417H01L29/43H01L21/28
Inventor 吴东平付超超张世理张卫
Owner FUDAN UNIV
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