Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Method for preparing substructure less than 10 nanometers on nanometer material surface

A technology of nanomaterials and substructures, applied in the manufacture of microstructure devices, processes for producing decorative surface effects, microstructure technology, etc., can solve the problems of reducing manufacturing efficiency and increasing manufacturing costs, and achieve the effect of convenient operation

Inactive Publication Date: 2013-04-03
SOUTHEAST UNIV
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this method is that the energy of the electron beam used must be greater than the threshold energy of the material, and the etching of the material must be carried out using a program-controlled method, that is, it is necessary to design the pattern first, and then control the position of the electron beam to control the etching. In addition, in order to obtain the processing of nanostructures below 10 nanometers, the beam spot diameter of the electron beam must be much smaller than the minimum scale to be processed
These aspects all put forward higher requirements on the equipment, so it also increases the manufacturing cost and reduces the manufacturing efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing substructure less than 10 nanometers on nanometer material surface
  • Method for preparing substructure less than 10 nanometers on nanometer material surface
  • Method for preparing substructure less than 10 nanometers on nanometer material surface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Embodiment 1: a kind of method that prepares substructure below 10 nanometers on the nanomaterial surface, this method comprises the steps:

[0025] 1) Choose zinc oxide nanowires with good crystallization and diameter less than 50 nanometers; the length of zinc oxide nanowires is not limited;

[0026] 2) The above-mentioned nanowires are supported on a copper mesh; the copper mesh used is a commercially available copper mesh for TEM experiments, generally with a diameter of 3 mm and a mesh size of 200-2000 mesh;

[0027] 3) Put the supported nanowires into the sample rod of the electron microscope (TEM), then insert it into the vacuum chamber of the TEM, and evacuate until the electron gun can work normally; the vacuum degree of the vacuum chamber is 5.0±1.0×10 -5 Pa;

[0028] 4) After the sample is stabilized, turn on the TEM, adjust the intensity and focus position of the electron beam, and scan or focus the electron beam on the surface of the sample according to th...

Embodiment 2

[0034] Embodiment 2: a method for preparing substructures below 10 nanometers on the surface of nanomaterials, the method comprising the following steps:

[0035] 1) Choose zinc oxide nanowires with good crystallization and diameter less than 50 nanometers; the length of zinc oxide nanowires is not limited;

[0036] 2) The nanowires supported by the above-mentioned nanowires are carried on the copper mesh; the copper mesh used is a commercially available copper mesh used for TEM experiments, generally with a diameter of 3 mm and a mesh number of 200-2000 meshes;

[0037] 3) Put the supported nanowires into the electron microscope (TEM) sample rod, then insert it into the vacuum chamber of the TEM, and evacuate until the electron gun can work normally; the vacuum degree of the vacuum chamber is 8.0±1.0×10 -5 Pa;

[0038] 4) Turn on the TEM, adjust the intensity and focusing position of the electron beam, and scan or focus the electron beam on the surface of the sample accordin...

Embodiment 3

[0041] Example 3: It is basically the same as Example 1, the difference is: the nanowires have been prepared into devices, so step 3) can be directly performed, wherein the nanowires are zinc oxide nanowires with good crystallinity and a diameter of less than 50 nanometers .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a substructure less than 10 nanometers on a nanometer material surface, and the method comprises the following steps: 1) selecting a well-crystallized metal oxide nanowire material with a diameter less than 50 nanometers, wherein the length of the nanowire material is not limited; 2) bearing the nanowire on a supporting substrate; 3) putting the supported nanowire in a vacuum cavity of an electron gun, performing vacuum-pumping to reach a range in which the electron gun can work normally; 4) turning on the electron gun, adjusting the electron beam intensity and the focusing position so as to allow the electron beam to scan or focus on a sample surface according to different dimensions and shapes of the sample to be processed and particular requirements; controlling the etched surface morphology structure by controlling the etching time and the electron beam intensity; 5) after etching, taking the sample out. The advantages of the invention are that the method is suitable for various metal oxide nanometer materials; the prepared product has a dimension less than 10 nanometers; the method is suitable for large-area preparation, and is convenient for operation.

Description

technical field [0001] The invention belongs to the technical field of advanced micro-nano materials and structure preparation in microelectronics and information electronics; specifically, it relates to a method for preparing substructures below 10 nanometers on the surface of nanometer materials by electron beam etching. Background technique [0002] The surface and interface of nanomaterials have always been the focus of nanoscience and technology. Many excellent properties of nanomaterials are closely related to their large specific surface area. Therefore, the surface treatment and surface fabrication of nanomaterials has always been an important research content in the field of nanoscience. [0003] At present, the most common method for fabricating the surface of nanomaterials is the focused ion beam (FIB) method. This method uses a focused source of accelerated heavy metal ions to process nanomaterials. The material scale that can be processed is generally above 5...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
Inventor 万能徐涛张义孙俊孙立涛
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com