Etching agent as well as preparation method and application thereof

A technology of etchant and ammonium persulfate, applied in the direction of optical mechanical equipment, surface etching composition, chemical instrument and method, etc., can solve the problem of inability to remove inorganic pollutants, and achieve the effect of saving production cost and simple operation

Active Publication Date: 2013-04-03
BEIJING SEVENSTAR ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Piranha etchant is highly effective in removing organic residues, however, it cannot remove inorganic contaminants such as heavy metals

Method used

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  • Etching agent as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The wafers to be processed are first cleaned with standard cleaning solution No. 1 (SC1) at a temperature of 60°C, then cleaned with deionized water at 70°C, and dried.

[0034] Fill the sulfuric acid cleaning tank with a concentration of 98% in the cleaning tank made of quartz material and heat it to 120 degrees, and slowly add ammonium persulfate powder at this temperature, the mass ratio is 7%, and stir to dissolve. Then, immerse the wafer into the cleaning bath for 10 minutes.

[0035] Take the wafer out. Then wash with No. 1 standard cleaning solution at 60°C, and then wash with deionized water at 70°C. Then dry with IPA vapor.

[0036] If there is not enough oxidizer, the wash tank will turn red or purple. The lifespan of a liquid medicine depends on how many wafers are washed. If you wash more, the medicine will lose its effect quickly. If you wash less, the medicine will last longer. However, about 4 hours after the proportioning of the medicinal solution, i...

Embodiment 2

[0039] The wafer to be processed is first cleaned with SC1 cleaning solution at a temperature of 60° C., then cleaned with deionized water at 70° C., and dried.

[0040] Fill the sulfuric acid cleaning tank with a concentration of 98% in the cleaning tank made of quartz material and heat it to 130 degrees, and slowly add ammonium persulfate powder at this temperature, the weight ratio is 10%, and stir to dissolve. Then, immerse the wafer into the cleaning bath for 8 minutes.

[0041] Take the wafer out. Then wash with No. 1 standard cleaning solution at 60°C, and then wash with deionized water at 70°C. Then steam dry with IPAvapor.

Embodiment 3

[0043] The wafer to be processed is first cleaned with SC1 cleaning solution at a temperature of 62°C, then cleaned with deionized water at 72°C, and dried.

[0044]Fill the sulfuric acid with a concentration of 98% in the cleaning tank made of quartz material and heat it to 110 degrees, and slowly add ammonium persulfate powder at this temperature, the weight ratio is 5%, and stir to dissolve. Then, immerse the wafer in the cleaning tank for 20 minutes.

[0045] Take the wafer out. Then wash with No. 1 standard cleaning solution at 60°C, and then wash with deionized water at 68°C. Then dry with IPA vapor.

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Abstract

The invention provides an etching agent consisting of sulfuric acid and ammonium persulphate, wherein the mass concentration of ammonium persulphate is 1%-25%. The mass concentration of sulfuric acid is 98%. The invention further provides a method for preparing the etching agent, and the method comprises a step of adding ammonium persulphate in sulfuric acid at 100-200 degrees centigrade. In the invention, the oxidant hydrogen peroxide is replaced by ammonium persulphate. Ammonium persulphate is powder, which makes the operation be simpler. When being used for processing a wafer or an optical mask, the etching agent disclosed by the invention is still not diluted after being washed for many times because sulfuric acid is a by-product of a reaction with an organism instead of water, so that the production cost is lowered.

Description

technical field [0001] The invention belongs to the field of cleaning of optical elements, in particular to an etchant and its preparation and application. Background technique [0002] Organic residues on wafers include photoresists, equipment oils, and human skin oils, fingerprints, dander, and respiratory particles. The removal of organic matter is crucial because when trying to use HF solution to remove the oxide layer, the residual organic matter will form a film that prevents the HF solution from contacting the oxidized form, that is, the film isolates the HF solution from contact less than the oxide film. That is, organic residues will hinder the removal of the oxide layer, thereby inhibiting the deposition of the selected dopant on the wafer or the photoflooding film area. [0003] Typically, 98% of H 2 SO 4 (sulfuric acid) and 30% H 2 o 2 (Hydrogen peroxide) in a volume ratio of 2-4:1 mixtures are used at 100°C and higher to remove residual organic matter. Th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/04H01L21/02
CPCH01L21/02052G03F1/00H01L21/31133H01L21/02C23G1/00C09K13/04C23F1/00G03F1/82G03F7/423
Inventor 萨莉·安·亨利黄金涛马嘉吴仪苏宇佳
Owner BEIJING SEVENSTAR ELECTRONICS CO LTD
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