Non-volatile highly-resistant-single-particle configuration memory unit

Abstract

The invention discloses a non-volatile highly-resistant-single-particle configuration memory unit and relates to an integrated circuit technique. The configuration memory unit comprises eight MOS (metal oxide semiconductor) transistors, gating MOS transistors and PL (party line) board lines, which form a four-level DICE (dual interlocked storage cell) structure. The configuration memory unit is characterized in that at least two of four nodes in the DICE structure are taken as ferroelectric connection nodes which can be connected to the PL board lines through ferroelectric capacitors. According to the invention, the DICE structure and the ferroelectric capacitors form a non-volatile FPGA (field programmable gate array), therefore, compared with an SRAM (static random access memory) type FPGA, an external configuration memory is eliminated, a system is simplified and the single-particle-resistant capacity of the non-volatile FPGA is substantially increased.

Description

technical field [0001] The present invention relates to integrated circuit technology. Background technique [0002] Electronic systems are more and more widely used in the aerospace field, and the influence of space radiation environment on electronic systems cannot be ignored. Radiation will degrade the performance parameters of the device, and even fail, affecting the reliable operation of the satellite and shortening the life of the satellite. According to satellite data statistics, 70% of its abnormal records are caused by the space radiation environment. With the development of aerospace electronic technology, field programmable gate array (FPGA) has received more and more attention. FPGA combines the advantages of semi-customized gate array circuits with the user-programmable features of programmable logic devices. The designed electronic products have achieved integration, miniaturization, high reliability, and high speed, and provide designers with the ability to ...

AI Technical Summary

Problems solved by technology

Although this paper proposes an improved DICE SRAM anti-radiation unit, the memory is not non-volatile. At the same time, as the chip processing line width gradually decreases, the anti-radiation effect of the DICE unit will increase with the density of the transistor. increases and weakens, and the article does not mention that this structure can be applied to the field of FPGA

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