Laser annealing device and laser annealing method

A laser annealing and annealing technology, applied in laser welding equipment, electrical components, circuits, etc.
CN103021826BActive Publication Date: 2016-06-29SUMITOMO HEAVY IND LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SUMITOMO HEAVY IND LTD
Publication Date
2016-06-29

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Abstract

The invention provides a laser annealing device and a laser annealing method. A general pulse waveform rises sharply from the start of oscillation, shows a peak value, and then gradually decreases. When the power shows a peak value, the surface of the annealing object is rapidly heated to a high temperature. Since the peak time is instantaneous, it is difficult to sufficiently heat the deep region of the annealing object. In the laser annealing apparatus of the present invention, when a pulse current is input, a laser pulse is emitted from a laser diode. The optical system guides the laser beam emitted from the laser diode to the annealing object. The driver supplies a pulse current having a top flat time waveform and a pulse width of 1 μs to 100 μs to the laser diode.
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Description

technical field

[0001] The invention relates to a laser annealing device and a laser annealing method. Background technique

[0002] In the heat treatment of semiconductor wafers, especially silicon wafers, heating in electric furnaces and rapid thermal annealing (RTA) are generally used. The heating time when applying RTA is on the order of milliseconds. In recent years, the application of laser spike annealing with a heating time shorter than 1 μs is also advancing.

[0003] In laser spike annealing in which the heating time is shorter than 1 μs, the temperature gradient in the thickness direction of the semiconductor wafer becomes steep due to the short heating time. Therefore, it is difficult to heat the deep region to a desired temperature without excessively raising the surface temperature of the semiconductor wafer. On the other hand, in RTA, since the heating time is long, the temperature of the entire semiconductor wafer rises. Due to the temperature rise of the...

Claims

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